Hot isostatic pressing of transition metal ions into chalcogenide laser host crystals

This paper describes a technique using a hot isostatic pressing (HIP) for the diffusion of transition metal ions into chalcogenide laser host crystals. Thin layers of chromium metal are sputtered onto the surface of zinc selenide and zinc sulfide crystals before treatment in a HIP chamber. The transmissivities, excited state lifetimes, and diffusion rates are measured for various dopant concentrations. Efficiency, spectral output, and tuning data are also measured for a Cr:ZnSe laser. The diffusion rate of 5.48 × 10−8 cm2/s is two orders of magnitude faster than other techniques reported in the literature, and the sub 140 pm measured linewidth is more than 350 times smaller than what is typical of commercially available crystals. Preliminary results for Fe:ZnSe, Co:ZnSe, and Ni:ZnSe are presented as well.

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