Influence of oxygen partial pressure on magnetron sputtered Sr0.8Nd0.3Bi2.5Ta2O9+x ferroelectric thin films
暂无分享,去创建一个
T. Sritharan | Yibin Li | Tupei Chen | Sam Zhang | Yang Liu
[1] Y. Sung,et al. Fluorite-to-Aurivillius phase transformation kinetics in sol–gel derived SBT thin films , 2005 .
[2] Y. Noguchi,et al. Praseodymium-modified SrBi2Ta2O9 with improved polarization properties at low electric field , 2003 .
[3] M. Kakihana,et al. Defect Engineering for Control of Polarization Properties in SrBi2Ta2O9 , 2002 .
[4] A. Laha,et al. Impact of Sr content on dielectric and electrical properties of pulsed laser ablated SrBi2Ta2O9 thin films , 2002 .
[5] K. Yoon,et al. (200)-predominant growth of radio-frequency sputtered SrBi_2Ta_2O_9 thin films , 2002 .
[6] M. Weihnacht,et al. SrBi2Ta2O9 has only two polar axes – a problem for high density ferroelectric memory devices , 2001 .
[7] Y. Noguchi,et al. Direct evidence of A -site-deficient strontium bismuth tantalate and its enhanced ferroelectric properties , 2001 .
[8] Y. Noguchi,et al. Defect Control for Large Remanent Polarization in Bismuth Titanate Ferroelectrics –Doping Effect of Higher-Valent Cations– , 2000 .
[9] T. Tseng,et al. The effect of oxygen-to-argon ratio on the electrical and reliability characteristics of sputtered Sr0.8Bi2.5Ta1.2Nb0.9O9+x thin films , 2000 .
[10] H. Funakubo,et al. Electrical properties of (001)- and (116)-oriented epitaxial SrBi2Ta2O9 thin films prepared by metalorganic chemical vapor deposition , 1999 .
[11] Choelhwyi Bae,et al. Ex situ growth of the c-axis preferred oriented SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si substrates , 1999 .
[12] D. Viehland,et al. Role of lower valent substituent-oxygen vacancy complexes in polarization pinning in potassium-modified lead zirconate titanate , 1999 .
[13] Soon-Gil Yoon,et al. Effect of bismuth on the ferroelectric properties of SrBi2Ta2O9 thin films deposited on Pt/SiO2/Si by a modified radio-frequency magnetron sputtering technique , 1998 .
[14] R. B. Tahar,et al. Tin doped indium oxide thin films: Electrical properties , 1998 .
[15] C. Thio,et al. Impedance spectroscopy of SrBi_2Ta_2O_9 and SrBi_2Nb_2O_9 ceramics correlation with fatigue behavior , 1997 .
[16] T. Tatsumi,et al. CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES 1080 Properties of SrBi2Ta2O9 ferroelectric thin films prepared by a modified metalorganic solution deposition technique , 1997 .
[17] T. Song,et al. Structural and ferroelectric properties of the c‐axis oriented SrBi2Ta2O9 thin films deposited by the radio‐frequency magnetron sputtering , 1996 .
[18] T. Noguchi,et al. Analysis of the Dependence of Ferroelectric Properties of Strontium Bismuth Tantalate (SBT) Thin Films on the Composition and Process Temperature , 1996 .
[19] D. Dimos,et al. Photoinduced changes in the fatigue behavior of SrBi2Ta2O9 and Pb(Zr,Ti)O3 thin films , 1996 .
[20] N. Soyama,et al. Preparation of Bi-Based Ferroelectric Thin Films by Sol-Gel Method , 1995 .
[21] A. Kingon,et al. PULSED LASER ABLATION SYNTHESIS AND CHARACTERIZATION OF LAYERED PT/SRBI2TA2O9/PT FERROELECTRIC CAPACITORS WITH PRACTICALLY NO POLARIZATION FATIGUE , 1995 .
[22] M. C. Scott,et al. Fatigue-free ferroelectric capacitors with platinum electrodes , 1995, Nature.
[23] Jai-Young Lee,et al. Effects of sputtering pressure and nitrogen concentration on the preferred orientation of AIN thin films , 1994 .
[24] R. Messier,et al. Micro-effects of resputtering due to negative ion bombardment of growing thin films , 1993 .
[25] R. Withers,et al. Structure refinement of commensurately modulated bismuth strontium tantalate, Bi2SrTa2O9 , 1992 .
[26] Suzuki,et al. Effects of Ce substitution and and reduction on the electronic states of Nd2-xCexCuO4-y studied by x-ray photoelectron. , 1990, Physical review. B, Condensed matter.
[27] M. Buchanan,et al. The influence of target oxidation and growth-related effects on the electrical properties of reactively sputtered films of tin-doped indium oxide , 1981 .
[28] A. Kolodziej,et al. The dynamics of reactive ion sputtering of SnSb and InSn alloys in an ArO2 atmosphere , 1981 .
[29] A. M. Glass,et al. Principles and Applications of Ferroelectrics and Related Materials , 1977 .
[30] E. Subbarao,et al. A family of ferroelectric bismuth compounds , 1962 .