论文信息 - Selective area oxidation of silicon with a scanning force microscope

Selective area oxidation of silicon with a scanning force microscope

The use of a scanning force microscope with a metallized tip to do selective area oxidation of silicon is demonstrated. Sub‐100 nm lines have been achieved. Removal of the oxide lines with buffered hydrofluoric acid reveals trenches in the silicon consistent with silicon consumption in SiO2 formation.

David R. Allee | D. Allee | H. C. Day | H. Day

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