A user-optimized electro-thermal IGBT model for power electronic circuit simulation in the circuit simulator ELDO

The authors present a user-optimized electro-thermal IGBT model for power electronic circuit simulation. The proposed model has been efficiently implemented in the circuit simulator ELDO for the purpose of reaching low simulation time and high convergence safety. The relevant physical effects are considered as well as different device design structures. The number of model parameters is reduced to a minimum since some of them are internally calculated.

[1]  D. Silber,et al.  Modelling of IGBTs and LIGBTs for Power Circuit Simulation , 1993 .

[2]  D. Silber,et al.  A versatile electrical model for IGBT including thermal effects , 1993, Proceedings of IEEE Power Electronics Specialist Conference - PESC '93.

[3]  W. Soppa,et al.  A process oriented VDMOSFET model for circuit simulation , 1992, Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.

[4]  D. Silber,et al.  Modeling of LDMOS and LIGBT structures at high temperatures , 1994, Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.

[5]  Jerry G. Fossum,et al.  Physical DMOST modeling for high-voltage IC CAD , 1990 .