论文信息 - Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experimental indication for defect filtering throughout the grown layer - 字舞流文

Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experimental indication for defect filtering throughout the grown layer

We present a model for the filtration of dislocations inside the seed window in epitaxial lateral overgrowth (ELO). We found that, when the additive effects of image and gliding forces exceed the d ...

Sebastian Lourdudoss | Pablo Aitor Postigo | F. Olsson | Iván Prieto | S. Lourdudoss | I. Prieto | P. Postigo | F. Olsson | Mengyao Xie | M. Xie

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