Determination of the dependence of the band-gap energy on composition for Cd1-xZnxTe.

We have grown Cd{sub 1{minus}{ital x}}Zn{sub {ital x}}Te layers over the entire composition range (0{le}{ital x}{le}1) by molecular-beam epitaxy on GaAs(100) substrates. The quality of the layers is good near the end points of the alloy range but decreases in the middle as expected. We have obtained a relationship for the band-gap energy at 4 K as a function of Zn concentration. This relationship exhibits significantly larger bowing than was previously thought.