Two-dimensional materials for next-generation computing technologies
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Ming Liu | Chunsen Liu | Yu-Gang Jiang | Qi Liu | David Wei Zhang | Shuiyuan Wang | Huawei Chen | Peng Zhou | Qi Liu | Ming Liu | David-Wei Zhang | P. Zhou | Chunsen Liu | Huawei Chen | Shuiyuan Wang | Yu-Gang Jiang
[1] K. F. Lee,et al. Scaling the Si MOSFET: from bulk to SOI to bulk , 1992 .
[2] R.H. Dennard,et al. Design Of Ion-implanted MOSFET's with Very Small Physical Dimensions , 1974, Proceedings of the IEEE.
[3] T. Numata,et al. Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm , 2002, Digest. International Electron Devices Meeting,.
[4] C. Hu,et al. Germanium-source tunnel field effect transistors with record high ION/IOFF , 2006, 2009 Symposium on VLSI Technology.
[5] T. Tezuka,et al. Electron Transport Properties of Ultrathin-body and Tri-gate SOI nMOSFETs with Biaxial and Uniaxial Strain , 2006, 2006 International Electron Devices Meeting.
[6] S. Banerjee,et al. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils , 2009, Science.
[7] P. Avouris,et al. Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene , 2009, 0908.0749.
[8] H. Dai,et al. Selective etching of graphene edges by hydrogen plasma. , 2010, Journal of the American Chemical Society.
[9] Kang L. Wang,et al. High-speed graphene transistors with a self-aligned nanowire gate , 2010, Nature.
[10] C. Hu,et al. Si tunnel transistors with a novel silicided source and 46mV/dec swing , 2010, 2010 Symposium on VLSI Technology.
[11] F. Schwierz. Graphene transistors. , 2010, Nature nanotechnology.
[12] Qin Zhang,et al. Low-Voltage Tunnel Transistors for Beyond CMOS Logic , 2010, Proceedings of the IEEE.
[13] R. Rooyackers,et al. Performance Enhancement in Multi Gate Tunneling Field Effect Transistors by Scaling the Fin-Width , 2010 .
[14] Gregory S. Snider,et al. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication , 2010, Nature.
[15] F. Xia,et al. The origins and limits of metal-graphene junction resistance. , 2011, Nature nanotechnology.
[16] Adrian M. Ionescu,et al. Tunnel field-effect transistors as energy-efficient electronic switches , 2011, Nature.
[17] C. Hu,et al. Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation , 2011, 2011 International Electron Devices Meeting.
[18] G. Dewey,et al. Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing , 2011, 2011 International Electron Devices Meeting.
[19] Thomas Heine,et al. Influence of quantum confinement on the electronic structure of the transition metal sulfide T S 2 , 2011, 1104.3670.
[20] N. Singh,et al. CMOS-Compatible Vertical-Silicon-Nanowire Gate-All-Around p-Type Tunneling FETs With $\leq 50$-mV/decade Subthreshold Swing , 2011, IEEE Electron Device Letters.
[21] A. Radenović,et al. Single-layer MoS2 transistors. , 2011, Nature nanotechnology.
[22] X. Duan,et al. High-frequency self-aligned graphene transistors with transferred gate stacks , 2012, Proceedings of the National Academy of Sciences.
[23] Lars Samuelson,et al. Tunnel field-effect transistors based on InP-GaAs heterostructure nanowires. , 2012, ACS nano.
[24] A. Javey,et al. High-performance single layered WSe₂ p-FETs with chemically doped contacts. , 2012, Nano letters.
[25] J. Appenzeller,et al. High performance multilayer MoS2 transistors with scandium contacts. , 2013, Nano letters.
[26] S. Trellenkamp,et al. Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors , 2013, IEEE Electron Device Letters.
[27] Geoffrey W. Burr,et al. Nanoscale electronic synapses using phase change devices , 2013, JETC.
[28] Shimeng Yu,et al. Synaptic electronics: materials, devices and applications , 2013, Nanotechnology.
[29] Wei Liu,et al. Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors. , 2013, Nano letters.
[30] Xianfan Xu,et al. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. , 2014, ACS nano.
[31] Likai Li,et al. Black phosphorus field-effect transistors. , 2014, Nature nanotechnology.
[32] Giuseppe Iannaccone,et al. Electronics based on two-dimensional materials. , 2014, Nature nanotechnology.
[33] Gautam Gupta,et al. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. , 2014, Nature materials.
[34] Baoming Wang,et al. Continuous Ultra-Thin MoS2 Films Grown by Low-Temperature Physical Vapor Deposition , 2014 .
[35] A. Seabaugh,et al. Tunnel Field-Effect Transistors: State-of-the-Art , 2014, IEEE Journal of the Electron Devices Society.
[36] G. W. Burr,et al. Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight element , 2015, 2014 IEEE International Electron Devices Meeting.
[37] Jaejin Lee,et al. 25.2 A 1.2V 8Gb 8-channel 128GB/s high-bandwidth memory (HBM) stacked DRAM with effective microbump I/O test methods using 29nm process and TSV , 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).
[38] Mark Horowitz,et al. 1.1 Computing's energy problem (and what we can do about it) , 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).
[39] Seungbae Park,et al. Three-Dimensional and 2.5 Dimensional Interconnection Technology: State of the Art , 2014 .
[40] Qing Wan,et al. Artificial synapse network on inorganic proton conductor for neuromorphic systems. , 2014, Nature communications.
[41] F. Xia,et al. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. , 2014, Nature communications.
[42] Xianfan Xu,et al. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. , 2014, ACS nano.
[43] Yu Huang,et al. Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions. , 2014, Nature nanotechnology.
[44] 신창환,et al. Negative Capacitance Field-Effect Transistor의 온도별 특성 연구 , 2014 .
[45] Kaustav Banerjee,et al. Electrical contacts to two-dimensional semiconductors. , 2015, Nature materials.
[46] Takashi Taniguchi,et al. Air-stable transport in graphene-contacted, fully encapsulated ultrathin black phosphorus-based field-effect transistors. , 2014, ACS Nano.
[47] P. Ajayan,et al. A subthermionic tunnel field-effect transistor with an atomically thin channel , 2015, Nature.
[48] Andras Kis,et al. Thickness-dependent mobility in two-dimensional MoS₂ transistors. , 2015, Nanoscale.
[49] M. Kamalakar,et al. Low Schottky barrier black phosphorus field-effect devices with ferromagnetic tunnel contacts. , 2015, Small.
[50] Yang Hui Liu,et al. Freestanding Artificial Synapses Based on Laterally Proton‐Coupled Transistors on Chitosan Membranes , 2015, Advanced materials.
[51] Xu Cui,et al. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage. , 2015, ACS nano.
[52] Lei Wang,et al. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. , 2015, Nature nanotechnology.
[53] Farnood Merrikh-Bayat,et al. Training and operation of an integrated neuromorphic network based on metal-oxide memristors , 2014, Nature.
[54] C. Stampfer,et al. Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper , 2015, Science Advances.
[55] Pritish Narayanan,et al. Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element , 2014, IEEE Transactions on Electron Devices.
[56] Jianhua Hao,et al. Field‐Effect Transistors Based on Amorphous Black Phosphorus Ultrathin Films by Pulsed Laser Deposition , 2015, Advanced materials.
[57] A. Bessonov,et al. Layered memristive and memcapacitive switches for printable electronics. , 2015, Nature materials.
[58] Zhihao Yu,et al. High‐Performance Monolayer WS2 Field‐Effect Transistors on High‐κ Dielectrics , 2015, Advanced materials.
[59] Electrical characterization of fully encapsulated ultra thin black phosphorous-based heterostructures with graphene contacts , 2014, 1412.1191.
[60] Wenhui Wang,et al. Two-dimensional antimonene single crystals grown by van der Waals epitaxy , 2016, Nature Communications.
[61] Zhihao Yu,et al. Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening , 2015, Advanced materials.
[62] Yongsuk Choi,et al. Multibit MoS2 Photoelectronic Memory with Ultrahigh Sensitivity , 2016, Advanced materials.
[63] Seongjun Park,et al. Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio , 2016, Nature Communications.
[64] Jun-Seok Park,et al. 14.6 A 1.42TOPS/W deep convolutional neural network recognition processor for intelligent IoE systems , 2016, 2016 IEEE International Solid-State Circuits Conference (ISSCC).
[65] C. Shin,et al. Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching , 2016, IEEE Electron Device Letters.
[66] X. Duan,et al. Van der Waals heterostructures and devices , 2016 .
[67] Hua Zhang,et al. Two-dimensional semiconductors for transistors , 2016 .
[68] Moon J. Kim,et al. MoS2 transistors with 1-nanometer gate lengths , 2016, Science.
[69] F. Xia,et al. Anisotropic Black Phosphorus Synaptic Device for Neuromorphic Applications , 2016, Advanced materials.
[70] K. Sun,et al. Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets. , 2016, Nano letters.
[71] M. H. Lee,et al. Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).
[72] Qi Liu,et al. Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory , 2016, Advanced materials.
[73] Subhasish Mitra,et al. Three-dimensional integration of nanotechnologies for computing and data storage on a single chip , 2017, Nature.
[74] Hong Zhou,et al. Steep-slope hysteresis-free negative capacitance MoS2 transistors , 2017, Nature Nanotechnology.
[75] P. Zhou,et al. Negative capacitance 2D MoS2 transistors with sub-60mV/dec subthreshold swing over 6 orders, 250 μA/μm current density, and nearly-hysteresis-free , 2017, 2017 IEEE International Electron Devices Meeting (IEDM).
[76] Juwon Lee,et al. Monolayer optical memory cells based on artificial trap-mediated charge storage and release , 2017, Nature Communications.
[77] Nicolas Locatelli,et al. Learning through ferroelectric domain dynamics in solid-state synapses , 2017, Nature Communications.
[78] Jinxiong Wu,et al. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se. , 2017, Nature nanotechnology.
[79] Young Sun,et al. A Synaptic Transistor based on Quasi‐2D Molybdenum Oxide , 2017, Advanced materials.
[80] Jinlan Wang,et al. Passivation of Black Phosphorus via Self‐Assembled Organic Monolayers by van der Waals Epitaxy , 2017, Advanced materials.
[81] Barry P Rand,et al. Extremely Low Operating Current Resistive Memory Based on Exfoliated 2D Perovskite Single Crystals for Neuromorphic Computing. , 2017, ACS nano.
[82] M. Marinella,et al. A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing. , 2017, Nature materials.
[83] Kunnyun Kim,et al. A High‐On/Off‐Ratio Floating‐Gate Memristor Array on a Flexible Substrate via CVD‐Grown Large‐Area 2D Layer Stacking , 2017, Advanced materials.
[84] Lianmao Peng,et al. Scaling carbon nanotube complementary transistors to 5-nm gate lengths , 2017, Science.
[85] Jing Guo,et al. Emulating Bilingual Synaptic Response Using a Junction-Based Artificial Synaptic Device. , 2017, ACS nano.
[86] F. Miao,et al. Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions , 2017, Nature Communications.
[87] Zhuo Wang,et al. In-Memory Computation of a Machine-Learning Classifier in a Standard 6T SRAM Array , 2017, IEEE Journal of Solid-State Circuits.
[88] Kate J. Norris,et al. Anatomy of Ag/Hafnia‐Based Selectors with 1010 Nonlinearity , 2017, Advanced materials.
[89] He Tian,et al. High Performance 2D Perovskite/Graphene Optical Synapses as Artificial Eyes , 2018, 2018 IEEE International Electron Devices Meeting (IEDM).
[90] Michael A. McGuire,et al. Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures , 2018, Science.
[91] Miguel Angel Lastras-Montaño,et al. Resistive random-access memory based on ratioed memristors , 2018, Nature Electronics.
[92] Arindam Basu,et al. Synergistic Gating of Electro‐Iono‐Photoactive 2D Chalcogenide Neuristors: Coexistence of Hebbian and Homeostatic Synaptic Metaplasticity , 2018, Advanced materials.
[93] Meng He,et al. Artificial Synapses Emulated by an Electrolyte‐Gated Tungsten‐Oxide Transistor , 2018, Advanced materials.
[94] X. Duan,et al. Two-dimensional transistors beyond graphene and TMDCs. , 2018, Chemical Society reviews.
[95] P. Ye. Steep-Slope Hysteresis-Free Negative-Capacitance 2D Transistors , 2018, 2018 76th Device Research Conference (DRC).
[96] Mengwei Si,et al. Steep-Slope WSe2 Negative Capacitance Field-Effect Transistor. , 2018, Nano letters.
[97] Yongli He,et al. Electric-double-layer transistors for synaptic devices and neuromorphic systems , 2018 .
[98] Sujan Kumar Gonugondla,et al. A Multi-Functional In-Memory Inference Processor Using a Standard 6T SRAM Array , 2018, IEEE Journal of Solid-State Circuits.
[99] Pritish Narayanan,et al. Equivalent-accuracy accelerated neural-network training using analogue memory , 2018, Nature.
[100] F. Zhang,et al. Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories , 2018, Nature Materials.
[101] J. Yang,et al. Robust memristors based on layered two-dimensional materials , 2018, 1801.00530.
[102] M. Hersam,et al. Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide , 2018, Nature.
[103] Ping Yang,et al. Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films and Their Implementations in Memristors for Brain‐Inspired Computing , 2018, Advanced Functional Materials.
[104] H. Peng,et al. Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches , 2018, Science.
[105] Shimeng Yu,et al. Neuro-Inspired Computing With Emerging Nonvolatile Memorys , 2018, Proceedings of the IEEE.
[106] H.-S. Philip Wong,et al. In-memory computing with resistive switching devices , 2018, Nature Electronics.
[107] Hitoshi Kubota,et al. Neural-like computing with populations of superparamagnetic basis functions , 2016, Nature Communications.
[108] M. Yun,et al. Low‐Power, Electrochemically Tunable Graphene Synapses for Neuromorphic Computing , 2018, Advanced materials.
[109] Eric Pop,et al. Electronic synapses made of layered two-dimensional materials , 2018, Nature Electronics.
[110] Nagarajan Raghavan,et al. Recommended Methods to Study Resistive Switching Devices , 2018, Advanced Electronic Materials.
[111] Farnood Merrikh-Bayat,et al. High-Performance Mixed-Signal Neurocomputing With Nanoscale Floating-Gate Memory Cell Arrays , 2018, IEEE Transactions on Neural Networks and Learning Systems.
[112] Zaiyao Fei,et al. Ferroelectric switching of a two-dimensional metal , 2018, Nature.
[113] Lei Liu,et al. Two-dimensional multibit optoelectronic memory with broadband spectrum distinction , 2018, Nature Communications.
[114] H-S Philip Wong,et al. Artificial optic-neural synapse for colored and color-mixed pattern recognition , 2018, Nature Communications.
[115] Yi Shi,et al. Light Stimulated IGZO-Based Electric-Double-Layer Transistors For Photoelectric Neuromorphic Devices , 2018, IEEE Electron Device Letters.
[116] Young Sun,et al. All‐Solid‐State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing , 2018, Advanced Functional Materials.
[117] Jung Min Lee,et al. Synaptic Barristor Based on Phase‐Engineered 2D Heterostructures , 2018, Advanced materials.
[118] Wei D. Lu,et al. Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing , 2018, Nature Materials.
[119] Yuchao Yang,et al. Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics , 2018, Advanced materials.
[120] S. Mozaffari,et al. Superconducting phase diagram of H3S under high magnetic fields , 2019, Nature Communications.
[121] X. Duan,et al. Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices , 2019 .
[122] Bai-Sun Kong,et al. Self-selective van der Waals heterostructures for large scale memory array , 2019, Nature Communications.
[123] C. Ross,et al. Crested two-dimensional transistors , 2019, Nature Nanotechnology.
[124] Jr-hau He,et al. Gate‐Tunable and Multidirection‐Switchable Memristive Phenomena in a Van Der Waals Ferroelectric , 2019, Advanced materials.
[125] Chunsen Liu,et al. Small footprint transistor architecture for photoswitching logic and in situ memory , 2019, Nature Nanotechnology.
[126] M. Berggren,et al. An Evolvable Organic Electrochemical Transistor for Neuromorphic Applications , 2019, Advanced science.
[127] Sen Song,et al. Bridging Biological and Artificial Neural Networks with Emerging Neuromorphic Devices: Fundamentals, Progress, and Challenges , 2019, Advanced materials.
[128] Anantha Chandrakasan,et al. Modern microprocessor built from complementary carbon nanotube transistors , 2019, Nature.
[129] Weisheng Zhao,et al. Two-dimensional spintronics for low-power electronics , 2019, Nature Electronics.
[130] Jingyu Li,et al. A Photoelectric-Stimulated MoS2 Transistor for Neuromorphic Engineering , 2019, Research.
[131] J. Yang,et al. Memristive crossbar arrays for brain-inspired computing , 2019, Nature Materials.
[132] G. Ryu,et al. Striated 2D Lattice with Sub‐nm 1D Etch Channels by Controlled Thermally Induced Phase Transformations of PdSe2 , 2019, Advanced materials.
[133] Yu Huang,et al. Van der Waals integration before and beyond two-dimensional materials , 2019, Nature.
[134] Xin Huang,et al. Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application , 2019, Advanced Functional Materials.
[135] H. Sirringhaus,et al. Selective UV‐Gating Organic Memtransistors with Modulable Levels of Synaptic Plasticity , 2019, Advanced Electronic Materials.
[136] P. Ye,et al. A ferroelectric semiconductor field-effect transistor , 2018, Nature Electronics.
[137] David-Wei Zhang,et al. A MoS2/PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility , 2018, Advanced materials.
[138] Jun Xu,et al. MoS2 Memtransistors Fabricated by Localized Helium Ion Beam Irradiation. , 2019, ACS nano.
[139] X. Duan,et al. High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability. , 2018, Nano letters.
[140] K. Novoselov,et al. Magnetic 2D materials and heterostructures , 2019, Nature Nanotechnology.
[141] M. Kunitski,et al. Double-slit photoelectron interference in strong-field ionization of the neon dimer , 2018, Nature Communications.
[142] Hao Zhu,et al. Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation , 2020, Advanced science.
[143] Dmitry K. Polyushkin,et al. Ultrafast machine vision with 2D material neural network image sensors , 2020, Nature.
[144] Mark C. Hersam,et al. Neuromorphic nanoelectronic materials , 2020, Nature Nanotechnology.
[145] M. Stiles,et al. Neuromorphic spintronics , 2020, Nature Electronics.
[146] Seungho Kim,et al. Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches , 2020, Nature Nanotechnology.