High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire
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Detlef Hommel | Edward A. Preble | M. Tutor | Tanja Paskova | Bo Monemar | Vanya Darakchieva | Stephan Figge | R. Kroeger | B. Monemar | S. Figge | D. Hommel | V. Darakchieva | T. Paskova | A. D. Hanser | R. Kroeger | E. Preble | N. M. Williams | A. Hanser | M. Tutor
[1] U. Pietsch. X-ray Scattering from Semiconductors, 2nd Edition, By Paul F. Fewster. Pp. 299. London: Imperial College Press. Price 56 GBP. ISBN 1-86094-360-8. , 2005 .
[2] D. K. Bowen,et al. High Resolution X-Ray Diffractometry And Topography , 1998 .
[3] Robert F. Davis,et al. Structural TEM study of nonpolar a-plane gallium nitride grown on (112_0) 4H-SiC by organometallic vapor phase epitaxy , 2005 .
[4] Zheng Gong,et al. Anisotropic structural characteristics of (112̄0) GaN templates and coalesced epitaxial lateral overgrown films deposited on (101̄2) sapphire , 2004 .
[5] N. Andrew,et al. Interpretation of the diffraction profile resulting from strain relaxation in epilayers , 1995 .
[6] James S. Speck,et al. Structural and morphological characteristics of planar (112̄0) a-plane gallium nitride grown by hydride vapor phase epitaxy , 2003 .
[7] R. Köhler,et al. X-ray diffraction peaks due to misfit dislocations in heteroepitaxial structures , 1997 .
[8] James S. Speck,et al. Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates , 2005 .
[9] Detlef Hommel,et al. Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition , 2005 .
[10] P. Fewster. EQUIPMENT FOR MEASURING DIFFRACTION PATTERNS , 2000 .
[11] B. Arnaudov,et al. Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers , 2005 .
[12] James S. Speck,et al. Polarity determination of a-plane GaN on r-plane sapphire and its effects on lateral overgrowth and heteroepitaxy , 2003 .
[13] J. Harris,et al. Optically controlled electroabsorption modulators for unconstrained wavelength conversion , 2004 .
[14] James S. Speck,et al. Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy , 2003 .
[15] Paul F. Fewster,et al. X Ray Scattering From Semiconductors , 2000 .