Temperature dependence of GaN high breakdown voltage diode rectifiers

Abstract The temperature dependence of reverse breakdown voltage (VRB) and forward turn-on voltage (VF) of GaN Schottky diode rectifiers is reported. The VRB values display a negative temperature coefficient (−0.92 V K−1 for 25–50°C; −0.17 V K−1 for 50−150°C), indicative of surface- or defect-assisted breakdown. The VF values decrease with increasing temperature. The room temperature breakdown voltage is approximately a factor of three lower than the theoretical maximum expected based on avalanche breakdown, and the current performance of GaN rectifiers is comparable to that of Si at the same on-resistance.

[1]  Muhammad H. Rashid,et al.  Power Electronics: Circuits, Devices and Applications , 1993 .

[2]  Steven T. Peake,et al.  Power semiconductor devices , 1995 .

[3]  S. Pearton.  GaN and Related Materials , 1997 .

[4]  J. C. Zolper,et al.  A review of junction field effect transistors for high-temperature and high-power electronics , 1998 .

[5]  M. Shur,et al.  Temperature Dependence of Breakdown Field in p-π-n GaN Diodes , 1998 .

[6]  R. Gutmann,et al.  Effect of reactive ion etch-induced damage on the performance of 4H-SiC schottky barrier diodes , 1998 .

[7]  Design And Fabrication Of Nitride Based High Power Devices , 1997 .

[8]  R. J. Shul,et al.  GAN : PROCESSING, DEFECTS, AND DEVICES , 1999 .

[9]  R. Raghunathan,et al.  High voltage 4H-SiC Schottky barrier diodes , 1995, IEEE Electron Device Letters.

[10]  J. Palmour,et al.  5.5 kV Bipolar Diodes From High Quality CVD 411-SiC , 1998 .

[11]  The potential of fast high voltage SiC diodes , 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.

[12]  Joan M. Redwing,et al.  High voltage (450 V) GaN Schottky rectifiers , 1999 .

[13]  M. Bhatnagar,et al.  Silicon carbide high-power devices , 1996 .

[14]  M. Melloch,et al.  Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers , 1998 .

[15]  Michael S. Shur,et al.  TEMPERATURE DEPENDENCE OF IMPACT IONIZATION IN ALGAN-GAN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS , 1998 .

[16]  G. Heydt,et al.  Applications Of High Power Electronic Switches In The Electric Power Utility Industry And The Needs For High Power Switching Devices , 1997 .

[17]  Anant K. Agarwal,et al.  4H-SiC power devices for use in power electronic motor control , 1998 .

[18]  K. Shenai,et al.  Performance evaluation of high-power wide band-gap semiconductor rectifiers , 1999 .

[19]  M. Melloch,et al.  High-voltage double-implanted power MOSFET's in 6H-SiC , 1997, IEEE Electron Device Letters.

[20]  Anne Henry,et al.  A 4.5 kV 6H silicon carbide rectifier , 1995 .

[21]  E. H. Rhoderick,et al.  Metal–Semiconductor Contacts , 1979 .

[22]  Vladimir Dmitriev,et al.  ELECTRIC BREAKDOWN IN GAN P-N JUNCTIONS , 1996 .