Phase change materials and their application to random access memory technology
暂无分享,去创建一个
R. Shelby | S. Raoux | J. Jordan-Sweet | B. Muñoz | M. Salinga | Yi-Chou Chen | Y. Shih | E. Lai | Ming-Hsiu Lee
[1] S. Ovshinsky. Reversible Electrical Switching Phenomena in Disordered Structures , 1968 .
[2] D. Emin,et al. Electrical Transport and Structural Properties of Bulk As-Te-I, As-Te-Ge, and As-Te Chalcogenide Glasses , 1973 .
[3] R. Shanks,et al. Chalcogenide memory materials , 1979 .
[4] N. Yamada,et al. Rapid‐phase transitions of GeTe‐Sb2Te3 pseudobinary amorphous thin films for an optical disk memory , 1991 .
[5] Nonvolatile Memory Based on Phase Transition in Chalcogenide Thin Film , 1993 .
[6] Norikazu Ohshima,et al. Crystallization of germanium–antimony–tellurium amorphous thin film sandwiched between various dielectric protective films , 1996 .
[7] S. Y. Kim,et al. Investigation of crystallization behavior of sputter-deposited nitrogen-doped amorphous Ge2Sb2Te5 thin films , 2000 .
[8] Study of the Ag–In–Te ternary system , 1999 .
[9] Myong R. Kim,et al. Crystal Structure and Microstructure of Nitrogen-Doped Ge2Sb2Te5 Thin Film , 2000 .
[10] V. Weidenhof,et al. Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements , 2000 .
[11] M Mansuripur,et al. Measurement of the thermal conductivity of erasable phase-change optical recording media. , 2000, Applied optics.
[12] M. Lankhorst,et al. Modelling glass transition temperatures of chalcogenide glasses. Applied to phase-change optical recording materials , 2002 .
[13] Preparation of ferroelectric thin films using sol-gel solutions dissolved in supercritical carbon dioxide , 2003 .
[14] Minoru Kumeda,et al. Nonvolatile Memory Based on Phase Change in Se–Sb–Te Glass , 2003 .
[15] M. Lankhorst,et al. Low-cost and nanoscale non-volatile memory concept for future silicon chips , 2005, Nature materials.
[16] S. G. Bishop,et al. Thermal conductivity of phase-change material Ge2Sb2Te5 , 2006 .
[17] M. Gijs,et al. Defect structure in micropillars using x-ray microdiffraction , 2006 .
[18] Kuan-Neng Chen,et al. Irreversible modification of Ge2Sb2Te5 phase change material by nanometer-thin Ti adhesion layers in a device-compatible stack , 2007 .
[19] Xiaoqian Wei,et al. Thickness Dependent Nano-Crystallization in Ge2Sb2Te5 Films and Its Effect on Devices , 2007 .
[20] A. Kellock,et al. Effect of Al and Cu doping on the crystallization properties of the phase change materials SbTe and GeSb , 2007 .
[21] M. Meyyappan,et al. One-Dimensional Phase-Change Nanostructure: Germanium Telluride Nanowire , 2007 .
[22] Eric Pop,et al. Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films , 2007 .
[23] Dolores C. Miller,et al. Direct observation of amorphous to crystalline phase transitions in nanoparticle arrays of phase change materials , 2007 .
[24] Matthias Wuttig,et al. Calorimetric measurements of structural relaxation and glass transition temperatures in sputtered films of amorphous Te alloys used for phase change recording , 2007 .
[25] Simone Raoux,et al. Crystallization properties of ultrathin phase change films , 2008 .