Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers

The photoluminescence (PL) and electroluminescence (EL) properties of Ge-implanted SiO2 layers thermally grown on a Si substrate were investigated and compared to those of Si-implanted SiO2 films. The PL spectra from Ge-implanted SiO2 were recorded as a function of annealing temperature. It was found that the blue-violet PL from Ge-rich oxide layers reaches a maximum after annealing at 500 °C for 30 min, and is substantially more intense than the PL emission from Si-implanted oxides. The neutral oxygen vacancy is believed to be responsible for the observed luminescence. The EL spectrum from the Ge-implanted oxide after annealing at 1000 °C correlates very well with the PL one, and shows a linear dependence on the injected current. The EL emission was strong enough to be readily seen with the naked eye and the EL efficiency was assessed to be about 5×10−4.

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