Advanced process control of a CVD tungsten reactor

An advanced multivariable in-line process control system, which combines traditional statistical process control (SPC) with feedback control, has been applied to the CVD tungsten process on an Applied Materials reactor. The goal of the model-based controller is to compensate for shifts in the process and maintain the wafer-state responses on target. The controller employs measurements made on test wafers to track the process behavior. This is accomplished by using model-based SPC, which compares the measurements with predictions obtained from process models. The process models relate the equipment settings to the wafer-state responses of interest. For CVD tungsten, a physically-based modeling approach was employed based on the reaction rate for the H/sub 2/ reduction of WF/sub 6/. The Arrhenius relationship for the kinetic model was linearized so that empirical modeling techniques could be applied. Statistically valid models were derived for deposition rate, film stress, and bulk resistivity using stepwise least-squares regression. On detecting a statistically significant shift in the process, the controller calculates adjustments to the settings to bring the process responses back on target. To achieve this, two additional test wafers are processed at slightly different settings than the current recipe. This local experiment allows the models to be updated to reflect the current process state. The model updates are expressed as multiplicative or additive changes in the process inputs and a change in the model constant. This approach for adaptive control also provides a diagnostic capability regarding the cause of the process shift. The adapted models are used by an optimizer to compute new settings to bring the responses back to target. The optimizer is capable of incrementally entering controllables into the strategy, reflecting the degree to which the engineer desires to manipulate each setting. The capability of the controller to compensate for induced shifts in the CVD tungsten process is demonstrated. Targets for film bulk resistivity and deposition rate were maintained while satisfying constraints on film stress and WF/sub 6/ conversion efficiency. The ability of the controller to update process models during routine operation is also investigated. The tuned process models better predict the process behavior over time compared to the untuned models and lead to improved process capability.