Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants

We present a stochastic description of hot-carrier degradation (HCD) which captures the impact of random traps (RTs) and random dopants (RDs) using our deterministic physical model for HCD. For each combination of stress voltages and stress time we generate 10,000 different samples with each of them having a unique configuration of RTs and RDs. Our analysis shows that both RTs and RDs broaden the set of degradation traces and device lifetimes, herewith resulting in average (over the sample ensemble) changes in the linear drain current lower than the nominal values from the deterministic model. Although at higher stress voltages device lifetimes follow bimodal normal distributions, at stress biases close to the operating regime the distributions are substantially different. Therefore, a proper modeling of HCD should be based on a full statistical description.

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