A 60㎓ Power Amplifier with 12.1 ㏈m & P1㏈CP in 0.18㎛ SiGe BiCMOS Process

This paper describes the design and analysis of a four-stages 60㎓ SiGe BiCMOS power amplifier. The proposed circuit uses single-ended common-emitter topology that draws 72㎽ from 1.8V supply. It is able to deliver 12.1㏈m output, 17.4㏈ power gain with a peak 14.1% PAE at its compression point. The S21 has a 3dB bandwidth from 55㎓ to 67㎓, which covers the whole of 60㎓ band. The power amplifier occupy a silicon area of 1.1 x 0.46 ㎛² and the measured results show that it can be fully adopted in the 60㎓ ISM band applications.