论文信息 - Submicron silicon carbide CMOS for smartpower applications

Submicron silicon carbide CMOS for smartpower applications

This paper describes the development of silicon carbide (SiC) submicron CMOS technology for smart power applications. NMOS transistors are fabricated with 0.5 /spl mu/m (drawn) channel lengths while PMOS transistors exhibit punchthrough at 0.8 /spl mu/m channel lengths. Digital logic circuits are also fabricated and exhibit nanosecond switching performance. Finally, performance limiting factors such as parasitic series resistance are also investigated.

Kevin T. Kornegay

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