Semiconductor memory device and data write and read method of the same

The present invention discloses a data write and a read method of a semiconductor memory device and the device. The apparatus includes a first global data line for precharging the local data line pair and the first and second first global data line pair at the time of a memory cell array in a precharge operation comprises a global data line pair to a first voltage level, a precharge circuit, a precharge operation when the second global data line pair to a second global data line precharge circuit, precharge, write, and a local data line pair during the read operation for precharging the second voltage level and the a first switching circuit for transferring data between a first global data line pair, a second switching circuit which during the read operation to transfer data between a first global data line pair and a second global data line pair, and the second during the read operation and amplifying the data from the global data line pair to data input of the sense amplifier, and a write data line in an operation to output data to a first global data line It consists of a data input circuit for outputting a line pair. Thus, can reduce the current consumption during the precharge operation, as well as light and can improve the speed, to prevent not at the time of the read operation is not reduced voltage difference between the global data line pair on an adverse effect to the read speed can.