论文信息 - A novel biased anti-parallel Schottky diode structure for subharmonic mixing

A novel biased anti-parallel Schottky diode structure for subharmonic mixing

Subharmonically pumped mixers using zero-biased anti-parallel Schottky diode pairs produce good results, but require a larger LO power than biased Schottky diodes. Presented here is a novel planar-diode anti-parallel pair that allows independent biasing of the two diodes. This diode pair is integrated into a quasi-optical wideband receiver and the RF measurements on a 1.2-/spl mu/m anode diameter pair show a reduced LO power requirement at 180 GHz by a factor of 2 to 3 with a similar DSB conversion loss and noise temperature (9.7 dB and 1850 K) to an unbiased Schottky diode pair. This structure has potential for applications at submillimeter-wave frequencies where a large amount of LO power is not easily available.<<ETX>>

G.M. Rebeiz | J.R. East | G.I. Haddad | Trong-Huang Lee | Chen-Yu Chi

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