Electron spin injection into GaAs from ferromagnetic contacts in remanence

We demonstrate electrical spin injection into a (GaIn)As∕GaAs light-emitting diode from the remanent state of ferromagnetic contacts in perpendicular geometry. Using a Fe∕Tb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we achieve a circular polarization degree of the emitted light of 0.75% at 90K.

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