Extremely small hole capture cross sections in HfO2/ HfxSiyOz/p-Si structures

Defects in Al∕HfO2∕HfxSiyOz∕p-Si capacitors have been characterized using thermally stimulated current at temperatures between 30 and 300K. The hole activation energy and capture cross section were extracted from the results. The authors observed shallow traps that move with changing the discharging voltage, giving rise to activation energies in the range 0.03–0.14eV. Postmetallization anneal passivated these traps and a deeper trap appears with a significantly lower shift with the discharging voltage. Very small apparent capture cross sections (capture cross section times tunneling probability) have been extracted (10−26–10−18cm2). Simulations agree very well with experimental data.

[1]  Charge trapping and interface characteristics of thermally evaporated HfO2 , 2004 .

[2]  Luigi Pantisano,et al.  Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks , 2003 .

[3]  Guido Groeseneken,et al.  Charge trapping in SiO 2 /HfO 2 gate dielectrics: comparison between charge-pumping and pulsed I D -V G , 2004 .

[4]  Massimo V. Fischetti,et al.  Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks , 2003 .

[5]  R. Wallace,et al.  High-κ gate dielectrics: Current status and materials properties considerations , 2001 .

[6]  Jack C. Lee,et al.  Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing , 2000 .

[7]  A. Stesmans,et al.  Stable trapping of electrons and holes in deposited insulating oxides: Al2O3, ZrO2, and HfO2 , 2004 .

[8]  Tak H. Ning,et al.  Hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field-effect transistors , 2003 .

[9]  M. Rosmeulen,et al.  Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectrics , 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

[10]  Peter Blood,et al.  The Electrical Characterization of Semiconductors: Majority Carriers and Electron States , 1992 .

[11]  John F. Conley,et al.  Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si , 2003 .

[12]  K. Kukli,et al.  Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen , 2002 .