Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes
暂无分享,去创建一个
Ali Soltani | Eva Monroy | M. Rousseau | J. C. De Jaeger | E. Monroy | A. Soltani | D. Deresmes | M. Berthe | J. D. Jaeger | M. Rousseau | C. Durand | M. Boucherit | Corentin Durand | Maxime Berthe | Dominique Deresmes | M. Boucherit
[1] James S. Speck,et al. Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates , 2002 .
[2] N. Klein,et al. Mechanisms of current formation in resonant tunneling AlN∕GaN heterostructures , 2007 .
[3] Werner Schrenk,et al. Negative differential resistance in dislocation-free GaN/AlGaN double-barrier diodes grown on bulk GaN , 2006 .
[4] T. C. L. G. Sollner,et al. Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes , 1989 .
[5] Maria Tchernycheva,et al. Ballistic transport in GaN/AlGaN resonant tunneling diodes , 2011 .
[6] A. E. Belyaev,et al. Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)] , 2003 .
[7] M. Razeghi,et al. Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes , 2010 .
[8] M. Razeghi,et al. AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition , 2010 .
[9] Quantum transport in GaN/AlN double-barrier heterostructure nanowires. , 2010, Nano letters.
[10] T. C. McGill,et al. Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes , 1991 .
[11] Michael S. Shur,et al. Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices , 1997 .