Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors

A measurement system comprised of an ultra-low-distortion function generator, lock-in amplifier, and semiconductor parameter analyzer is used for sensitive extraction of the small-signal thermal impedance network of bipolar devices and circuits. The extraction procedure is demonstrated through measurements on several silicon-on-glass NPN test structures. Behavioral modeling of the mutual thermal coupling obtained by fitting a multipole rational complex function to measured data is presented.

[1]  Anna W. Topol,et al.  Electrical integrity of state-of-the-art 0.13 /spl mu/m SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication , 2002, Digest. International Electron Devices Meeting,.

[2]  J. Hajjar,et al.  Self-heating in high performance bipolar transistors fabricated on SOI substrates , 1992, 1992 International Technical Digest on Electron Devices Meeting.

[3]  V. d'Alessandro,et al.  A back-wafer contacted silicon-on-glass integrated bipolar process. Part I. The conflict electrical versus thermal isolation , 2004, IEEE Transactions on Electron Devices.

[4]  E. S. Schlig,et al.  Thermal properties of very fast transistors , 1970 .

[5]  B. Gustavsen,et al.  Enforcing Passivity for Admittance Matrices Approximated by Rational Functions , 2001, IEEE Power Engineering Review.

[6]  M. Schroter,et al.  Modeling thermal resistance in trench-isolated bipolar technologies including trench heat flow , 2002 .

[7]  Roger D. Pollard,et al.  Low-frequency dispersion and its influence on the intermodulation performance of AlGaAs/GaAs HBTs , 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

[8]  Ronald Dekker,et al.  Substrate transfer for RF technologies , 2003 .

[9]  R.M. Fox,et al.  Scalable small-signal model for BJT self-heating , 1991, IEEE Electron Device Letters.

[10]  D. J. Walkey,et al.  Simultaneous extraction of thermal and emitter series resistances in bipolar transistors , 1997, Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting.

[11]  C.G. Thornton,et al.  A new high current mode of transistor operation , 1958, IRE Transactions on Electron Devices.

[12]  S. Jeng,et al.  SiGe HBTs with cut-off frequency of 350 GHz , 2002, Digest. International Electron Devices Meeting,.

[13]  Sang-Gug Lee,et al.  Compact modeling of BJT self-heating in SPICE , 1993, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[14]  P. Palestri,et al.  Compact modeling of thermal resistance in bipolar transistors on bulk and SOI substrates , 2002 .

[15]  G. Meijer.  The current dependency of the output conductance of voltage-driven bipolar transistors , 1977 .

[16]  Niccolò Rinaldi,et al.  Small-signal operation of semiconductor devices including self-heating, with application to thermal characterization and instability analysis , 2001 .

[17]  Wen-Chau Liu,et al.  Thermal coupling in 2-finger heterojunction bipolar transistors , 1995 .

[18]  Robert Fox,et al.  Predictive modeling of thermal effects in BJTs , 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.

[19]  J.M. Nebus,et al.  Analysis of low frequency memory and influence on solid state HPA intermodulation characteristics , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

[20]  T. Smy,et al.  Compact representation of temperature and power dependence of thermal resistance in Si, Inp and GaAs substrate devices using linear models , 2002 .

[21]  T. Rahkonen,et al.  Measurement technique for characterizing memory effects in RF power amplifiers , 2000, RAWCON 2000. 2000 IEEE Radio and Wireless Conference (Cat. No.00EX404).

[22]  R. H. Winkler.  Thermal properties of high-power transistors , 1967 .

[23]  R. P. Arnold,et al.  A quantitative study of emitter ballasting , 1972 .

[25]  L.C.N. de Vreede,et al.  Experimental Verification of the Smoothie Database Model for Third and Fifth Order Intermodulation Distortion , 2002, 32nd European Solid-State Device Research Conference.

[26]  N. Nenadovic,et al.  Thermal instability in two-finger bipolar transistors , 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

[27]  V. d'Alessandro,et al.  A back-wafer contacted silicon-on-glass integrated bipolar process. Part II. A novel analysis of thermal breakdown , 2004, IEEE Transactions on Electron Devices.

[28]  M. Pfost,et al.  A practical method to extract the thermal resistance for heterojunction bipolar transistors , 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

[29]  Vincenzo d'Alessandro,et al.  A critical review of thermal models for electro-thermal simulation , 2002 .

[30]  Robert Fox,et al.  Thermal impedance extraction for bipolar transistors , 1996 .

[31]  D. J. Walkey,et al.  Prediction of thermal resistance in trench isolated bipolar device structures , 1998, Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).

[32]  B. Jagannathan,et al.  Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors , 2001, 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496).

[34]  J. Schoukens,et al.  Parametric identification of transfer functions in the frequency domain-a survey , 1994, IEEE Trans. Autom. Control..

[35]  R. M. Fox,et al.  Thermal parameter extraction for bipolar circuit modelling , 1991 .

[36]  Robert Fox,et al.  A physics-based dynamic thermal impedance model for vertical bipolar transistors on SOI substrates , 1999 .

[37]  Ernst Christen,et al.  Vhdl-ams---a hardware description language for analog and mixed-signal applications , 1999 .

[38]  Fadhel M. Ghannouchi,et al.  Thermal memory effects modeling and compensation in RF power amplifiers and predistortion linearizers , 2003 .

[39]  C. Popescu.  Selfheating and thermal runaway phenomena in semiconductor devices , 1970 .

[40]  T. Vanhoucke,et al.  Revised method for extraction of the thermal resistance applied to bulk and SOI SiGe HBTs , 2004, IEEE Electron Device Letters.

[41]  C. C. McAndrew,et al.  SiGe HBT self-heating modeling and characterization from AC data , 2002, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.

[42]  D. J. Walkey,et al.  Extraction and modelling of thermal behavior in trench isolated bipolar structures , 1999, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024).

[43]  Ira Miller,et al.  Analog behavioral modeling with the Verilog-A language , 1997 .

[44]  E. D. Cyan.  Handbook of Chemistry and Physics , 1970 .