Laser : a layout sensitivity explorer : report and user's manual

As the IC pattern resolutions tend 10 become smaller the layout geometry plays a more important role in IC yield. The probability that a chip will fail is directly related to the way that the IC artwork is laid out. By examining the possible places where catastrophic defects may occur one can prevent potential faults, and thus estimate the reliability of the design. Rrealistic yield simulation tools must consider the specific layout. It is, therefore, ideal a CAE tool that automatically explores and predicts the layout reliability for real environmentai conditions prevailing in the manufacturing line. We present a system capable of interactively finding the critical areas for shorts and breaks, the sensitivity, and the yield of the IC artwork,for any range of defect sizes. The implementation is based on a simple scanline algorithm and performs only one layout extraction for any span of defect sizes

[1]  Lech L Jozwiak,et al.  The full decomposition of sequential machines with the state and output behaviour realization , 1988 .

[2]  Jeanine Weekes Schroer,et al.  The Finite String Newsletter Abstracts of Current Literature Glisp User's Manual , 2022 .

[3]  Charles H. Stapper,et al.  Modeling of Defects in Integrated Circuit Photolithographic Patterns , 1984, IBM J. Res. Dev..

[4]  J Siuzdak Optical Couplers for Coherent Optical Phase Diversity Systems , 1988 .

[5]  Wojciech Maly,et al.  Realistic Fault Modeling for VLSI Testing , 1987, 24th ACM/IEEE Design Automation Conference.

[6]  A. V. Ferris-Prabhu,et al.  Modeling the critical area in yield forecasts , 1985 .

[7]  D. M. H. Walker,et al.  VLASIC: A Catastrophic Fault Yield Simulator for Integrated Circuits , 1986, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

[8]  C. H. Stapper On a composite model to the IC yield problem , 1975 .

[9]  Thomas Ottmann,et al.  Algorithms for Reporting and Counting Geometric Intersections , 1979, IEEE Transactions on Computers.

[10]  Charles H. Stapper,et al.  Modeling of Integrated Circuit Defect Sensitivities , 1983, IBM J. Res. Dev..

[11]  Lmlf Hosselet,et al.  Martinus van Marum : a Dutch scientist in a revolutionary time , 1988 .

[12]  Andrzej J. Strojwas,et al.  VLSI Yield Prediction and Estimation: A Unified Framework , 1986, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

[13]  J. Pineda de Gyvez Always: A System for Wafer Yield Analysis , 1988 .

[14]  Michael Ian Shamos,et al.  Computational geometry: an introduction , 1985 .

[15]  Wojciech Maly,et al.  Modeling of Lithography Related Yield Losses for CAD of VLSI Circuits , 1985, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

[16]  Wojciech Maly,et al.  Yield estimation model for VLSI artwork evaluation , 1983 .

[17]  A. Ferris-Prabhu Role of defect size distribution in yield modeling , 1985, IEEE Transactions on Electron Devices.

[18]  J. Pineda de Gyvez,et al.  On the definition of critical areas for IC photolithographic spot defects , 1989, [1989] Proceedings of the 1st European Test Conference.

[19]  J.G.M. Delissen The linear regression model : model structure selection and biased estimators , 1988 .

[20]  Vn Bondarev,et al.  On system identification using pulse-frequency modulated signals , 1988 .

[21]  John Paul Shen,et al.  Inductive Fault Analysis of MOS Integrated Circuits , 1985, IEEE Design & Test of Computers.

[22]  C. Stapper The effects of wafer to wafer defect density variations on integrated circuit defect and fault distributions , 1985 .

[23]  V.K.I. Kalasek Comparison of an analytical study and EMTP implementation of complicated three-phase schemes for reactor interruption , 1988 .