The development of double patterning processes/schemes are widely in progress for 2x nm node and beyond by using 193nm immersion lithography. It is realized that a resist shrink step is necessary in many double patterning process cases due to the resolution limit of the 193nm immersion exposure tool. As the development work progresses into the mass-product transition phase, the requirement for technical performances has become more difficult to be achieved by existing resist shrink technologies. In order to overcome these difficulties, we have developed "wet slimming" process based on our coater/developer technologies including the platform. The process is optimized for CD uniformity and defectivity. The process also has good robustness to the various possible resist materials and/or exposure conditions used by industry. In this paper, we introduce the scheme of wet slimming process together with basic performance data such as CD controllability, CD uniformity, defectivity and I-D bias. The evaluation data on actual double patterning processed wafers is reported as well.