Innovative solutions on 193 immersion-based self-aligned multiple patterning

EUV lithography is one of the most promising techniques for sub-20nm half-pitch HVM devices, however it is well known that EUVL solutions still face significant challenges. Therefore we have focused on 193 immersion extension by using a self-aligned multiple patterning (SAMP), and this technique easily enables fine periodical patterning. Spacer patterning techniques have already been applied to sub-20nm hp advanced devices. In general, SAMP consists of SADP, SATP, SAQP, etc. We have already introduced about evolutional schemes and cost effective processes in past SPIE sessions.[1-12] SAQP enable further down-scaling to 10nm hp from SADP levels, however we must consider next advanced solution for sub-10nm hp resolution. In this paper, we will discuss about a possibility of 193 immersion extension using SAOP (self-aligned octuple patterning).

[1]  Hiroki Murakami,et al.  The important challenge to extend spacer DP process towards 22nm and beyond , 2010, Advanced Lithography.

[2]  Hidetami Yaegashi,et al.  The enhanced photoresist shrink process technique toward 22nm node , 2011, Advanced Lithography.

[3]  Hidetami Yaegashi,et al.  Novel approaches to implement the self-aligned spacer double-patterning process toward 11-nm node and beyond , 2011, Advanced Lithography.

[4]  Hidetami Yaegashi,et al.  Process variability of self-aligned multiple patterning , 2013, Advanced Lithography.

[5]  Hidetami Yaegashi,et al.  Sustainable scaling technique on double-patterning process , 2013, Advanced Lithography.

[6]  Hidetami Yaegashi,et al.  Extendibility of self-aligned type multiple patterning for further scaling , 2013, Advanced Lithography.

[7]  Hidetami Yaegashi,et al.  Process requirement of self-aligned multiple patterning , 2013, Advanced Lithography.

[8]  Hidetami Yaegashi,et al.  Applicability of double-patterning process for fine-hole patterns , 2012, Other Conferences.

[9]  Hidetami Yaegashi,et al.  Overview: continuous evolution on double-patterning process , 2012, Other Conferences.

[10]  Hidetami Yaegashi,et al.  CD error budget analysis for self-aligned multiple patterning , 2012, Other Conferences.

[11]  Kenichi Oyama,et al.  Novel approaches to controlling photo-resist CD in double patterning processes , 2010, Advanced Lithography.

[12]  Kenichi Oyama,et al.  Advanced self-aligned DP process development for 22-nm node and beyond , 2010, Advanced Lithography.