GaAs E Band Radio Chip-Set

A GaAs pHEMT radio chip-set, consisting of receiver, up-converter and power amplifier, for E-band applications demonstrates excellent conversion gain, linearity and output power over the entire 15 GHz bandwidth of the European Telecommunications Standards Institute (ETSI) E-band specification. The receiver's measured gain is 12 dB with an image rejection exceeding 10 dB, an IIP2 of 17 dBm and IIP3 of 5 dBm. For the up-converter, the measured conversion gain exceeds 10 dB and the OIP3 is approximately 26 dBm. The power amplifier has an average measured output power of 25.4 dBm and exceeds 24.5 dBm over the band. This amplifier has a measured small signal gain of 20 dB, OIP3 of approximately 32 dBm and the input and output return losses exceed 15 dB. The saturated output exceeds previous results for a power amplifier spanning the full 71 to 86 GHz span of the ETSI E bands for any semiconductor system. To the authors' knowledge this is the highest performance E-band full chipset solution realized in a commercially available GaAs foundry.

[1]  M. Piloni,et al.  E-Band Microwave Transceiver using MWgSP technology for PtP radio equipment , 2010, The 40th European Microwave Conference.

[2]  R. Lai,et al.  A 94 GHz monolithic high output power amplifier , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

[3]  Hong-Yeh Chang,et al.  A 77-GHz MMIC power amplifier for automotive radar applications , 2003, IEEE Microwave and Wireless Components Letters.

[4]  Bumjin Kim,et al.  Full W-band power amplifier/combiner utilizing GaAs technology , 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest.

[5]  Anthony E. Parker.  Advances in nonlinear characterization of millimetre-wave devices for telecommunications , 2007, SPIE Micro + Nano Materials, Devices, and Applications.

[6]  A. Kurdoghlian,et al.  GaN MMIC PAs for E-Band (71 GHz - 95 GHz) Radio , 2008, 2008 IEEE Compound Semiconductor Integrated Circuits Symposium.

[7]  Wen-Kai Wang,et al.  Full ETSI E-Band Doubler, Quadrupler and 24 dBm Power Amplifier , 2012, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[8]  Satoshi Masuda,et al.  E-Band 85-mW Oscillator and 1.3-W Amplifier ICs Using 0.12µm GaN HEMTs for Millimeter-Wave Transceivers , 2010, 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[9]  Anthony E. Parker,et al.  LNA Design Based on an Extracted Single Gate Finger Model , 2010, 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[10]  H. Massler,et al.  Metamorphic 94 GHz power amplifier MMICs , 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

[11]  K. Tsukashima,et al.  An E-band transmitter module constructed with four WLCSP MMICs solder-reflowed On PCB , 2012, 2012 7th European Microwave Integrated Circuit Conference.

[12]  K. Herrick,et al.  W-band metamorphic HEMT with 267 mW output power , 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

[13]  James T. Harvey,et al.  Packaged, Integrated 32 to 40 GHz Millimeter-Wave Up-Converter , 2010, 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[14]  P. Kangaslahti,et al.  W-Band GaN MMIC with 842 mW output power at 88 GHz , 2010, 2010 IEEE MTT-S International Microwave Symposium.

[15]  Y.C. Chen,et al.  A 427 mW, 20% compact W-band InP HEMT MMIC power amplifier , 1999, 1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001).