论文信息 - Comparison of CF4 plasma versus Cl2 plasma dry etching for gate-recessed Normally-off GaN-based MISHEMT - 字舞流文

Comparison of CF4 plasma versus Cl2 plasma dry etching for gate-recessed Normally-off GaN-based MISHEMT

Y. Hao | Xiao-hua Ma | Minhan Mi | Bin Hou | Yang Lu | Xiaowei Zhou | Ling Yang | Jiejie Zhu | Lixiang Chen | Q. Zhu | Meng Zhang | Hengshuang Zhang | Mei Wu | Xinchuang Zhang