SIMS STUDIES ON ANOMALOUS BEHAVIOR OF PHOSPHORUS AND OTHER IMPLANTS IN SILICON.

Abstract A phosphorus implant in p-type silicon was analyzed by SIMS, and both the implant profile and the matrix signal were observed to exhibit some anomalous behavior. Further studies revealed the same behavior in other implants. This phenomenon was observed when an n-type dopant was implanted into a p-type matrix, or vice versa. However, some exceptions arose, making the interpretation difficult. The use of matrix signal normalization was adopted and found to improve the results.

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