论文信息 - The effect of polysilicon doping on the reverse short-channel effect in sub-quarter micron NMOS transistors

The effect of polysilicon doping on the reverse short-channel effect in sub-quarter micron NMOS transistors

Reverse short-channel effect modulation by poly-Si doping level is explained in terms of the effective oxide thickness change due to poly-Si depletion. This modulation is not accounted for in the conventional theories of RSCE and should be taken into consideration in design of submicron CMOSFETs.

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