Negative-Capacitance Characteristics in a Steady-State Ferroelectric Capacitor Made of Parallel Domains

In this letter, the negative-capacitance characteristics in a steady-state ferroelectric capacitor made of parallel domains are investigated by modeling. Through simulation and analysis of dynamic process, we demonstrate that the ferroelectric capacitor in steady states can hold one negative-capacitance domain at most. As a result, the manifested charge–voltage curve for the multi-domain ferroelectric is remarkably different from the S-shaped curve for single-domain ferroelectric. The conclusion can be readily generalized to parallel negative-capacitance capacitors. It indicates that dynamic process of polarization evolving in time domain plays critical roles in analyzing negative-capacitance characteristics even for steady-state ferroelectric devices. Significant ingredients are revealed for understanding and exploring negative-capacitance devices.

[1]  Kaushik Bhattacharya,et al.  A computational model of ferroelectric domains. Part I: model formulation and domain switching , 2005 .

[2]  Chenming Hu,et al.  Sub-60mV-swing negative-capacitance FinFET without hysteresis , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

[3]  C. Eom,et al.  Ferroelectric domain structures of epitaxial (001) BiFeO3 thin films , 2007 .

[4]  C. Hwang,et al.  Interfacial charge-induced polarization switching in Al2O3/Pb(Zr,Ti)O3 bi-layer , 2015 .

[5]  Yogesh Singh Chauhan,et al.  Compact Model for Ferroelectric Negative Capacitance Transistor With MFIS Structure , 2017, IEEE Transactions on Electron Devices.

[6]  M. Alam,et al.  Proposal of a Hysteresis-Free Zero Subthreshold Swing Field-Effect Transistor , 2014, IEEE Transactions on Electron Devices.

[7]  Asif Islam Khan,et al.  Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor , 2016, IEEE Electron Device Letters.

[8]  Yue Peng,et al.  Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved Ids , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

[9]  L. You,et al.  Negative capacitance in a ferroelectric capacitor. , 2014, Nature materials.

[10]  C. Shin,et al.  Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching , 2016, IEEE Electron Device Letters.

[11]  S. Datta,et al.  Use of negative capacitance to provide voltage amplification for low power nanoscale devices. , 2008, Nano letters.

[12]  Y. Taur,et al.  Modeling and Design of Ferroelectric MOSFETs , 2011, IEEE Transactions on Electron Devices.

[13]  C. Shin,et al.  Negative Capacitance FinFET With Sub-20-mV/decade Subthreshold Slope and Minimal Hysteresis of 0.48 V , 2017, IEEE Electron Device Letters.

[14]  J. Shim,et al.  Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices. , 2015, Nano letters.

[15]  Jaehyun Lee,et al.  Analysis of Drain-Induced Barrier Rising in Short-Channel Negative-Capacitance FETs and Its Applications , 2017, IEEE Transactions on Electron Devices.

[16]  C. Hu,et al.  Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation , 2011, 2011 International Electron Devices Meeting.

[17]  Albert Chin,et al.  Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High- $\kappa$ Gate Dielectric , 2014, IEEE Electron Device Letters.

[18]  Lothar Frey,et al.  Ferroelectricity in Simple Binary ZrO2 and HfO2. , 2012, Nano letters.

[19]  Akira Toriumi,et al.  Fully coupled 3-D device simulation of negative capacitance FinFETs for sub 10 nm integration , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).