An Integrated Bootstrap Diode Emulator for 600-V High Voltage Gate Drive IC With P-Sub/P-Epi Technology

An integrated bootstrap diode emulator, including the high voltage field-effect-transistor (HV-FET), the gate control circuit and the back-gate control circuit, is experimentally proposed base on p-sub/p-epi bipolar-CMOS-DMOS technology for the first time. By adopting the gate and the back-gate control circuits, the charging time of the bootstrap capacitor can be improved by about 27% without any latch-up issues. The measured blocking voltage of the proposed HV-FET is higher than 750 V, which can be embedded in the isolation structure without sacrificing the chip area and is suitable for 600-V motor control system application. Finally, a 600-V-class high voltage gate drive IC with the proposed integrated bootstrap diode emulator is fabricated. The chip size is about 2.1 mm2 and the charging duration is about 80 μs with 1-μF bootstrap capacitor.

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