Evaluation of commercial ADC radiation tolerance for accelerator experiments

Electronic components used in high energy physics experiments are subjected to a radiation background composed of high energy hadrons, mesons and photons. These particles can induce permanent and transient effects that affect the normal device operation. Ionizing dose and displacement damage can cause chronic damage which disable the device permanently. Transient effects or single event effects are in general recoverable with time intervals that depend on the nature of the failure. The magnitude of these effects is technology dependent with feature size being one of the key parameters. Analog to digital converters are components that are frequently used in detector front end electronics, generally placed as close as possible to the sensing elements to maximize signal fidelity. We report on the development of a technique for testing analog to digital converters for radiation effects, in particular for single event effects. A total of seventeen commercial ADCs were evaluated for ionizing dose tolerance and extensive SEU measurements performed on a twelve and fourteen bit ADCs. Mitigation strategies for single event effects (SEE) are discussed for their use in the large hadron collider environment.

[1]  S. E. Kerns,et al.  Single-Event, Enhanced Single-Event and Dose-Rate Effects with Pulsed Proton Beams , 1987, IEEE Transactions on Nuclear Science.

[2]  R. Allmon,et al.  Soft Error Susceptibilities of 22 nm Tri-Gate Devices , 2012, IEEE Transactions on Nuclear Science.

[3]  M. B. Sampson,et al.  The Indiana University cyclotron facility , 1971 .

[4]  H.H.K. Tang,et al.  Measurement of the flux and energy spectrum of cosmic-ray induced neutrons on the ground , 2004, IEEE Transactions on Nuclear Science.

[5]  Robert J. Walters,et al.  Proton nonionizing energy loss (NIEL) for device applications , 2003 .

[6]  P. Marshall,et al.  Proton effects in charge-coupled devices , 1996 .

[7]  G. G. Stokes "J." , 1890, The New Yale Book of Quotations.

[8]  Miguel Pombar,et al.  Neutron Induced Single Event Upset Dependence on Bias Voltage for CMOS SRAM With BPSG , 2013, IEEE Transactions on Nuclear Science.

[9]  N. Seifert,et al.  Correlating low energy neutron SER with broad beam neutron and 200 MeV proton SER for 22nm CMOS Tri-Gate devices , 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

[10]  P. Aarnio,et al.  Pion induced displacement damage in silicon devices , 1993 .

[11]  H.J. Barnaby,et al.  Total-Ionizing-Dose Effects in Modern CMOS Technologies , 2006, IEEE Transactions on Nuclear Science.

[12]  E. Blackmore,et al.  Issues for single-event proton testing of SRAMs , 2004, IEEE Transactions on Nuclear Science.

[13]  E Cascio,et al.  The proton irradiation program at the Northeast Proton Therapy Center , 2003, 2003 IEEE Radiation Effects Data Workshop.

[14]  Peter Hazucha,et al.  Characterization of soft errors caused by single event upsets in CMOS processes , 2004, IEEE Transactions on Dependable and Secure Computing.

[15]  Mark B. Chadwick,et al.  Updated NIEL calculations for estimating the damage induced by particles and γ-rays in Si and GaAs , 2001 .

[16]  Marty R. Shaneyfelt,et al.  Use of COTS microelectronics in radiation environments , 1999 .

[17]  Alessandro Paccagnella,et al.  Ionizing radiation effects on ultra-thin oxide MOS structures , 2004 .

[18]  B. Takala,et al.  Correlation of neutron dosimetry using a silicon equivalent proportional counter microdosimeter and SRAM SEU cross sections for eight neutron energy spectra , 2003 .