Ku-band 20 W power GaAs FETs

High power Ku-band internally matched GaAs FETs have been developed using multi-chip power combiner/divider technology. An output power of 43.2 dBm at 1 dB gain compression with 6.9 dB gain and 29.5% power-added-efficiency has been obtained at 14 GHz. This state-of-the-art performance has been achieved by (1) optimizing the carrier concentration profiles of the active layer and making the buffer layer resistivity higher, (2) adopting the double-recess structure to get the higher breakdown voltage and (3) designing the high efficiency power combiner/divider circuits.<<ETX>>