Quasichemical Reactions Involving Point Defects in Irradiated Semiconductors

[1]  T. Torchinskaya,et al.  The recharge-enhanced transformations of donor-acceptor pairs and clusters in CdS , 1982 .

[2]  V. Vinetskiǐ,et al.  Probability of defect formation in an elastic impact of atoms in crystals , 1981 .

[3]  G. N. Semenova,et al.  Radiation‐stimulated relaxation of internal stresses in heteroepitaxial systems , 1981 .

[4]  David M. Larsen,et al.  Stress dependence of the binding energy ofD−centers in Si , 1981 .

[5]  V. V. Emtsev,et al.  Ionization mechanism of the defect production in semiconductors , 1981 .

[6]  G. E. Chaika,et al.  New Mechanism of Electric Field Influence on Defect Creation in Non-Metallic Crystals , 1980 .

[7]  G. D. Watkins,et al.  Negative-U Properties for Point Defects in Silicon , 1980 .

[8]  G. Kuster,et al.  The characterization of annealing behaviour of neutron irradiated silicon by means of electrochemical measurements , 1980 .

[9]  M. Schlüter,et al.  Silicon Vacancy: A Possible "Anderson Negative-U" System , 1979 .

[10]  V. Vinetskiǐ,et al.  Localized Bipolarons in Ionic Crystals , 1978 .

[11]  J. Bourgoin,et al.  Enhanced diffusion mechanisms , 1978 .

[12]  B. Oksengendler,et al.  Subthreshold defect production in silicon , 1976 .

[13]  V. Vinetskiǐ,et al.  The kinetics of formation and the parameters of radiation defect clusters in silicon , 1976 .

[14]  Philip W. Anderson,et al.  Model for the Electronic Structure of Amorphous Semiconductors , 1975 .

[15]  Lionel C. Kimerling,et al.  Observation of recombination-enhanced defect reactions in semiconductors , 1974 .

[16]  B. Müller,et al.  Theory of induced molecular-orbital K x rays in heavy-ion collisions , 1974 .

[17]  G. D. Watkins.  EPR observation of close Frenkel pairs in irradiated ZnSe , 1974 .

[18]  A. Gerasimov,et al.  On the Peculiarities of Silicon Amorphization at Ion Bombardment , 1972, August 16.

[19]  R. Hasiguti,et al.  The 220°K defect in electron irradiated p-Type Germanium , 1971 .

[20]  J. M. Meese,et al.  Impurity dependence of the low temperature annealing in n-type germanium , 1971 .

[21]  B. Masters.  Semivacancy pair in crystalline silicon , 1971 .

[22]  Ryukichi Hashiguchi.  Lattice defects in semiconductors , 1968 .

[23]  A. Seeger,et al.  DIFFUSION MECHANISMS AND POINT DEFECTS IN SILICON AND GERMANIUM. , 1968 .

[24]  T. A. Callcott,et al.  IRRADIATION DAMAGE IN n-TYPE GERMANIUM AT 4.2$sup 0$K. , 1967 .

[25]  I. Haddad,et al.  Energy dependence of anisotropy of defect production in electron irradiated diamond‐type crystals , 1966 .

[26]  F. Morehead,et al.  Self-Compensation-Limited Conductivity in Binary Semiconductors. III. Expected Correlations With Fundamental Parameters , 1964 .

[27]  G. D. Watkins,et al.  NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON , 1964 .

[28]  G. H. Vineyard,et al.  Dynamics of Radiation Damage in a Body-Centered Cubic Lattice , 1964 .

[29]  T. Yamazaki,et al.  Angular Distributions of (α, n) Reaction son Be and C , 1963 .

[30]  K. Weiser.  Theory of Diffusion and Equilibrium Position of Interstitial Impurities in the Diamond Lattice , 1962 .

[31]  G. Vineyard,et al.  THE DYNAMICS OF RADIATION DAMAGE , 1960 .

[32]  J. W. Mackay,et al.  LOW-TEMPERATURE ANNEALING STUDIES IN Ge , 1959 .

[33]  A. Fein,et al.  Influence of a Variable Ejection Probability on the Displacement of Atoms , 1958 .

[34]  T. Waite.  DIFFUSION-LIMITED ANNEALING OF RADIATION DAMAGE IN GERMANIUM , 1957 .

[35]  R S Pease,et al.  REVIEW ARTICLES: The Displacement of Atoms in Solids by Radiation , 1955 .

[36]  W. Brown,et al.  ANNEALING OF BOMBARDMENT DAMAGE IN GERMANIUM: EXPERIMENTAL , 1953 .

[37]  Herman Feshbach,et al.  The Coulomb Scattering of Relativistic Electrons by Nuclei , 1948 .