论文信息 - A realization of low-distortion CMOS transconductance amplifier

A realization of low-distortion CMOS transconductance amplifier

A new CMOS transconductance amplifier with low-harmonic distortion is proposed. The used technique is based on the parallel connection of two amplifiers. The first transconductor is working in the triode region, the other one is in the saturation. Compared to the known method, the realization of the discussed circuit provides a good value of G/sub m//I parameter and lower power consumption. An estimation indicates that 15% power saving can be achieved. A special current-biasing block and large size MOS transistors will not be required. The results of the theoretical analysis as well as the results of the computer simulations are presented.

A. S. Korotkov | D. V. Morozov

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