论文信息 - Optimization of RF-22nm FDSOI figures of merit with 3D TCAD simulation

Optimization of RF-22nm FDSOI figures of merit with 3D TCAD simulation

The aim of this study is to illustrate the efficiency of TCAD for simulating RF devices in advanced technology nodes and identify optimization paths. A strategy involving 3D simulation and a multilayered description of the resistive gate is proposed, followed by a calibration step of the TCAD setup against measurements. Then, various effects impacting the values of the Ft/Fmax RF figures of merit are assessed. At last, thanks to combination of TCAD with Design of Experiments, the sensitivity analysis of the most influent process parameters as well as their interactions is performed.

[1] T. Tatsumi,et al. Geometry Optimization of Sub-100nm Node RF CMOS Utilizing Three Dimensional TCAD Simulation , 2006, 2006 European Solid-State Device Research Conference.

[2] S. H. Jen,et al. Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz , 1999 .

[3] J. Mazurier,et al. 22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

[4] Thomas H. Lee,et al. The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES , 2003 .

[5] F. Danneville,et al. Revisited RF Compact Model of Gate Resistance Suitable for High-K/Metal Gate Technology , 2013, IEEE Transactions on Electron Devices.