Low Dark Count Rate and High Single-Photon Detection Efficiency Avalanche Photodiode in Geiger-Mode Operation

An In0.53Ga0.47As-InP avalanche photodiode with very low dark current (0.15 pA at 95% breakdown voltage, 200 K) has been characterized in gated mode for single-photon detection. The temperature dependence of dark current and dark count yields activation energy of ~0.4 eV from 240 K to 297 K. High single-photon detection efficiency (SPDE) at telecom wavelengths with very low dark count rate (DCR) (e.g., DCR =12 kHz at SPDE =45% at 1.31 mum and 200 K) was achieved

[1]  J. Rarity,et al.  Single-photon counting for the 1300-1600-nm range by use of peltier-cooled and passively quenched InGaAs avalanche photodiodes. , 2000, Applied optics.

[2]  A. Lacaita,et al.  Trapping phenomena in avalanche photodiodes on nanosecond scale , 1991, IEEE Electron Device Letters.

[3]  Mark A. Itzler,et al.  Manufacturable planar bulk-InP avalanche photodiodes for 10 Gb/s applications , 1999, 1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting. IEEE Lasers and Electro-Optics Society 1999 Annual Meeting (Cat. No.99CH37009).

[4]  Joe C. Campbell,et al.  1.52 μm room-temperature photon-counting optical time domain reflectometer , 1985 .

[5]  G. Buller,et al.  Design and performance of an InGaAs-InP single-photon avalanche diode detector , 2006, IEEE Journal of Quantum Electronics.

[6]  A. Walker,et al.  Performance and design of InGaAs /InP photodiodes for single-photon counting at 1.55 microm. , 2000, Applied optics.

[7]  Nicolas Gisin,et al.  Photon counting at telecom wavelengths with commercial InGaAs/InP avalanche photodiodes: Current performance , 2004 .

[8]  Andrew D. MacGregor,et al.  Photon-counting techniques with silicon avalanche photodiodes , 1993, Photonics West - Lasers and Applications in Science and Engineering.

[9]  Gilles Brassard,et al.  Quantum Cryptography , 2005, Encyclopedia of Cryptography and Security.