Physical and electrical properties of nanolaminated HfO2∕LaAlO3∕HfO2 dielectric on Si

Because of high defectivity and poor uniformity in polycrystalline HfO2, searching for an amorphous dielectric with a high dielectric constant and good stability has become an increasingly important task for high-k gate-stack research. We show that nanolaminated HfO2∕LaAlO3∕HfO2 dielectric grown on Si not only remains amorphous after annealing in N2 at 900°C for 60s but also has an effective dielectric constant comparable to that of HfO2. Additionally, electrical characterization of the capacitors made from the laminated dielectric revealed a smaller hysteresis and improved voltage stress behavior compared to its polycrystalline HfO2 counterpart.

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