Fabrication of ultra-high density InAs-stacked quantum dots by strain-controlled growth on InP(3 1 1)B substrate

Abstract We have fabricated stacked InAs quantum dots (QDs) on InP(3 1 1)B substrates. An ultra-high density of QDs was obtained by a method of compensation of strain by controlling the lattice constant of spacer layers without destruction of QDs size uniformity and ordering structure which is characteristic of QDs formation on (3 1 1)B surface. A strong 1.58 μm photoluminescence was observed in this sample at room temperature.

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