In–Ga intermixing in low-temperature grown GaAs delta doped with In

Low-temperature grown GaAs films with indium delta layers are studied by transmission electron microscopy. The delta layers in the as-grown film are found to be as thick as four monolayers (ML) independently of a nominal In deposit of 0.5 or 1 ML, a thickness which reflects the film surface roughness during the low-temperature growth. A pronounced In–Ga intermixing is observed in the films subjected to 500–700 °C isochronal anneals. The In–Ga interdiffusion diffusivity is evaluated. The effective activation energy for In–Ga interdiffusion is found to be 1.1±0.3 eV which is significantly smaller than a value of 1.93 eV for a stoichiometric GaAs. The difference seems to result from a loss of the gallium vacancy supersaturation upon annealing, and is consistent with an annihilation enthalpy of 0.8 eV.

[1]  H. Yamaguchi,et al.  SCANNING TUNNELING MICROSCOPY STUDY OF GAAS (001) SURFACES GROWN BY MIGRATION-ENHANCED EPITAXY AT LOW TEMPERATURES , 1998 .

[2]  Q. Huang,et al.  Influence of growth conditions on Al-Ga interdiffusion in low-temperature grown AlGaAs/GaAs multiple quantum wells , 1997 .

[3]  Eicke R. Weber,et al.  GA VACANCIES IN LOW-TEMPERATURE-GROWN GAAS IDENTIFIED BY SLOW POSITRONS , 1997 .

[4]  D. Nolte,et al.  Enhanced diffusion in nonstoichiometric quantum wells and the decay of supersaturated vacancy concentrations , 1996 .

[5]  A. Calawa,et al.  The effect of excess gallium vacancies in low‐temperature GaAs/AlAs/GaAs:Si heterostructures , 1996 .

[6]  C. P. Lee,et al.  Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers , 1996 .

[7]  D. Nolte,et al.  Investigation of interface intermixing and roughening in low‐temperature‐grown AlAs/GaAs multiple quantum wells during thermal annealing by chemical lattice imaging and x‐ray diffraction , 1995 .

[8]  E. Weber,et al.  The Role of Point Defects in Non-Stoichiometric III-V Compounds , 1995 .

[9]  D. Nolte,et al.  THE ROLE OF EXCESS ARSENIC IN INTERFACE MIXING IN LOW-TEMPERATURE-GROWN ALAS/GAAS SUPERLATTICES , 1995 .

[10]  H. R. Chen,et al.  Kinetics of compositional disordering of AlGaAs/GaAs quantum wells induced by low‐temperature grown GaAs , 1995 .

[11]  Albert Chin,et al.  Strong accumulation of As precipitates in low temperature InGaAs quantum wells grown by molecular beam epitaxy , 1994 .

[12]  J. Harbison,et al.  Planar, low-loss optical waveguides fabricated by solid-phase regrowth , 1992 .

[13]  Kim,et al.  Measuring properties of point defects by electron microscopy: The Ga vacancy in GaAs. , 1992, Physical review letters.

[14]  E. Haller,et al.  Annealing studies of low‐temperature‐grown GaAs:Be , 1992 .

[15]  P. Melman,et al.  GaAs/AlGaAs quantum‐well intermixing using shallow ion implantation and rapid thermal annealing , 1989 .

[16]  Stephen J. Pearton,et al.  Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs‐GaxAl1−xAs interfaces , 1986 .

[17]  G. L. Pearson,et al.  Properties of vacancy defects in GaAs single crystals , 1975 .

[18]  N. Faleev,et al.  Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature , 1997 .