Crystallization of amorphous GeTe simulated by neural network potential addressing medium-range order
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Dongsun Yoo | Seungwu Han | Seungwu Han | Dongsun Yoo | W. Jeong | Dongheon Lee | Kyeongpung Lee | Wonseok Jeong | Kyeo-Re Lee | Dongheon Lee
[1] Sébastien Le Roux,et al. Ring statistics analysis of topological networks: New approach and application to amorphous GeS2 and SiO2 systems , 2010 .
[2] Marco Bernasconi,et al. Breakdown of Stokes–Einstein relation in the supercooled liquid state of phase change materials , 2012, 1207.7269.
[3] Tae Hoon Lee,et al. Microscopic Mechanism of Doping‐Induced Kinetically Constrained Crystallization in Phase‐Change Materials , 2015, Advanced materials.
[4] B. Gleixner,et al. Data Retention Characterization of Phase-Change Memory Arrays , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
[5] I. Simandan,et al. Thermal stability of phase change GaSb\GeTe, SnSe\GeTe and GaSb\SnSe double stacked films revealed by X-ray reflectometry and X-ray diffraction , 2018, Journal of Non-Crystalline Solids.
[6] Seungwu Han,et al. Atomic energy mapping of neural network potential , 2019, Physical Review Materials.
[7] J. Tominaga,et al. Local structure of crystallized GeTe films , 2003 .
[8] Zhitang Song,et al. Ni-doped GST materials for high speed phase change memory applications , 2015 .
[9] Matthias Wuttig,et al. Laser induced crystallization of amorphous Ge2Sb2Te5 films , 2001 .
[10] M. Bernasconi,et al. Priming effects in the crystallization of the phase change compound GeTe from atomistic simulations. , 2019, Faraday discussions.
[11] Nongnuch Artrith,et al. An implementation of artificial neural-network potentials for atomistic materials simulations: Performance for TiO2 , 2016 .
[12] Steve Plimpton,et al. Fast parallel algorithms for short-range molecular dynamics , 1993 .
[13] Robert O. Jones,et al. Crystallization processes in the phase change material Ge2Sb2Te5: Unbiased density functional/molecular dynamics simulations , 2016 .
[14] R. Kondor,et al. Gaussian approximation potentials: the accuracy of quantum mechanics, without the electrons. , 2009, Physical review letters.
[15] Q. Nie,et al. Resolving glass transition in Te-based phase-change materials by modulated differential scanning calorimetry , 2017 .
[16] S. Elliott,et al. Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials. , 2008, Nature materials.
[17] Seungwu Han,et al. First-principles calculations on effects of Al and Ga dopants on atomic and electronic structures of amorphous Ge2Sb2Te5 , 2019, Journal of Applied Physics.
[18] Xiang Shen,et al. Unraveling the Crystallization Kinetics of Supercooled Liquid GeTe by Ultrafast Calorimetry , 2017 .
[19] W. J. Wang,et al. Breaking the Speed Limits of Phase-Change Memory , 2012, Science.
[20] Jonathan M. Skelton,et al. Atomistic Origin of the Enhanced Crystallization Speed and n-Type Conductivity in Bi-doped Ge-Sb-Te Phase-Change Materials , 2014 .
[21] M. Kund,et al. Nanosecond switching in GeTe phase change memory cells , 2009 .
[22] Y. Shibuta,et al. Estimation of Solid-liquid Interfacial Energy from Gibbs-Thomson Effect: A Molecular Dynamics Study , 2011 .
[23] P. Steinhardt,et al. Bond-orientational order in liquids and glasses , 1983 .
[24] Yihong Wu,et al. Fast phase transitions induced by picosecond electrical pulses on phase change memory cells , 2008 .
[25] Hideki Horii,et al. A microscopic model for resistance drift in amorphous Ge2Sb2Te5 , 2011 .
[26] J. Behler. First Principles Neural Network Potentials for Reactive Simulations of Large Molecular and Condensed Systems. , 2017, Angewandte Chemie.
[27] Pritish Narayanan,et al. Neuromorphic computing using non-volatile memory , 2017 .
[28] H. Horii,et al. Effects of pressure on atomic and electronic structure and crystallization dynamics of amorphous Ge 2 Sb 2 Te 5 , 2010 .
[29] Jörg Behler,et al. Fast Crystallization of the Phase Change Compound GeTe by Large-Scale Molecular Dynamics Simulations. , 2013, The journal of physical chemistry letters.
[30] M. Chen,et al. Compound materials for reversible, phase‐change optical data storage , 1986 .
[31] D. Ielmini,et al. Phase change materials and their application to nonvolatile memories. , 2010, Chemical reviews.
[32] Eric Pop,et al. Low-Power Switching of Phase-Change Materials with Carbon Nanotube Electrodes , 2011, Science.
[33] Dan Williams,et al. Platform Storage Performance With 3D XPoint Technology , 2017, Proceedings of the IEEE.
[34] J. Behler. Neural network potential-energy surfaces in chemistry: a tool for large-scale simulations. , 2011, Physical chemistry chemical physics : PCCP.
[35] Noboru Yamada,et al. Structural basis for the fast phase change of Ge2Sb2Te5: Ring statistics analogy between the crystal and amorphous states , 2006 .
[36] Dongheon Lee,et al. Toward Reliable and Transferable Machine Learning Potentials: Uniform Training by Overcoming Sampling Bias , 2018, The Journal of Physical Chemistry C.
[37] Jörg Behler,et al. Atomistic Simulations of the Crystallization and Aging of GeTe Nanowires , 2017 .
[38] Germany,et al. Neural network interatomic potential for the phase change material GeTe , 2012, 1201.2026.
[39] Seungwu Han,et al. SIMPLE-NN: An efficient package for training and executing neural-network interatomic potentials , 2019, Comput. Phys. Commun..
[40] S. Elliott,et al. Ab Initio computer simulation of the early stages of crystallization: application to Ge(2)Sb(2)Te(5) phase-change materials. , 2011, Physical review letters.
[41] G. Kresse,et al. Ab initio molecular dynamics for liquid metals. , 1993 .
[42] H. Wong,et al. Crystallization times of Ge–Te phase change materials as a function of composition , 2009 .
[43] Topological memory using phase-change materials , 2018 .
[44] Jiri Orava,et al. Classical-nucleation-theory analysis of priming in chalcogenide phase-change memory , 2017 .
[45] Songlin Feng,et al. Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon , 2015, Nanoscale Research Letters.
[46] Michele Parrinello,et al. Heterogeneous Crystallization of the Phase Change Material GeTe via Atomistic Simulations , 2015 .
[47] R. Meyer,et al. The surface tension in a structural model for the solid-liquid interface , 1976 .
[48] Burke,et al. Generalized Gradient Approximation Made Simple. , 1996, Physical review letters.
[49] Jörg Behler,et al. Dynamical heterogeneity in the supercooled liquid state of the phase change material GeTe. , 2014, The journal of physical chemistry. B.
[50] R. O. Jones,et al. Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe , 2007 .
[51] J. Behler. Atom-centered symmetry functions for constructing high-dimensional neural network potentials. , 2011, The Journal of chemical physics.
[52] Blöchl,et al. Projector augmented-wave method. , 1994, Physical review. B, Condensed matter.
[53] Zhitang Song,et al. Stress reduction and performance improvement of phase change memory cell by using Ge2Sb2Te5-TaOx composite films , 2011 .
[54] R. O. Jones,et al. Nucleus-driven crystallization of amorphous Ge2Sb2Te5: A density functional study , 2012 .