A new tensile tester for thin films was developed to evaluate the reliability of the microelectro-mechanical devices. This tester uses the grip that fixes a thin film specimen to a probe by electrostatic force. The authors applied this tester for polycrystalline silicon (poly-Si) thin-films prepared under various conditions. The microstructure of the film is controlled by the crystallizing temperature. The process conditions and the microstructures that contribute to the strength of poly-Si film are identified by the tensile strength and the fracture toughness. The mean tensile strength of each specimen size ranges from 1.8 to 3.7 GPa, and the fracture toughness calculated from the strength of the notched specimen ranges from 1.9 to 4.5 MN/m{sup 3/2}. The 1000 C annealed film has higher strength and toughness than the other films because of the high annealing temperature and the small grain size. The contributions to the strength are evaluated by the additional annealing at 1000 C for the low temperature annealed films.
[1]
Toshiyuki Tsuchiya,et al.
Tensile Testing of Polycrystalline Silicon Thin Films Using Electrostatic Force Grip.
,
1996
.
[2]
Bin Yuan,et al.
New test structures and techniques for measurement of mechanical properties of MEMS materials
,
1996,
Photonics West - Micro and Nano Fabricated Electromechanical and Optical Components.
[3]
David W. Greve,et al.
Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon films
,
1988
.
[4]
C. Dunn,et al.
Mechanical properties and microstructures of Al-1%Si thin film metallizations
,
1987
.
[5]
B. Boxall.
A change of etch rate associated with the amorphous to crystalline transition in CVD layers of silicon
,
1977
.