1.54 μm electroluminescence from erbium-doped SiGe light emitting diodes

Er-doped SiGe light emitting diodes were fabricated by implanting Er3+ ions into SiGe epi-layers. The fabricated SiGe:Er diodes show good current–voltage characteristics with a typical reverse breakdown voltage between 10 and 14 V. In the forward bias region, the ideality factor η is found to be 1.84, which indicates that the forward current is dominated by space charge recombinations. By injecting minority carriers into the diodes, Er3+ related emission was observed in the 1.54 μm region at 77 K. To obtain the maximum electroluminescence intensity, the post-implantation annealing under vacuum condition was found to be 800 °C for 30 min.

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