Solid precursor MOCVD of heteroepitaxial rutile phase TiO2

Abstract Rutile-phase TiO 2 films have been grown on (1120)- and (0001)-oriented sapphire by solid source MOCVD. A growth-rate activation energy of 37 ± 4 kJ mol −1 , an 0.8-order dependence on the precursor concentration, and a zero-order dependence on oxygen partial pressure are reported for a new Ti precursor, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) titanium(III). Reduction of the carbon content in the films was accomplished by the addition of excess oxygen in the growth atmosphere. X-ray diffraction spectra show that heteroepitaxial (101) rutile was grown on (1120) sapphire with a Θ rocking curve FWHM of 0.3° for the (101) rutile peak. The spectra also show that (100) rutile was grown on (0001) sapphire with a Θ rocking curve FWHM of 0.2° for the (100) rutile peak but with misorientation in the planes parallel to the growth plane. The surface morphologies of the films were also examined by SEM, showing a surface roughness of 300 A as supported by AFM.

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