Extraction of process specific photolithography model parameters

In order to truly represent photolithography through simulation, the exposure, bake, and development models and model parameters must be accurate. Using the approach for the measurement of the in-situ development rate, developed in the first paper of this two paper series, the model parameters were extracted for Shipley 812 resist with Shipley MF312 developer. Development rates for exposures of 66, 90, and 114 mJ/cm2 were measured. It was discovered that the set of Kim model parameters, R1 through R6, were highly correlated with the combination of the Dill exposure parameters. Thus, for A equals 0.581 micrometers -1, B equals 0.082 micrometers -1 equals 0.013 cm2/mJ, the parameters R1 equals 25.559 micrometers /min, R2 equals 10.451 micrometers /min, R3 equals 1.879, R4 equals 0.112, R5 equals 1.586, R6 equals 0.000 micrometers , and (sigma) equals 0.0016 micrometers were extracted. A comparison of simulated data using the extracted model parameters with the measured data demonstrated the quality of the fit.© (1994) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.