Quantum efficiency stability of silicon photodiodes.

The stability of the quantum efficiency of inversion layer, phosphorus-diffused (n on p), and boron-diffused (p on n) photodiodes has been investigated. Unsatisfactory silicon-silicon dioxide interfaces, latent recombination centers in the diffused layers, and moisture absorption by the device were identified as possible causes of instability. Diodes were fabricated using processes in which these sources of instability were carefully controlled. The resulting diodes were subjected to various accelerated aging tests, and the external quantum efficiency of the diodes was monitored during the tests. Diodes made by older procedures, in which some important parameters affecting stability were not controlled, were included in the study for comparison. The major result of this work is the demonstration that n on p photodiodes are inherently more stable than p on n types in the ultraviolet and blue spectral regions, but that stable p on n devices can also be produced with sufficient care.

[1]  K. Stock,et al.  On the aging of photovoltaic cells , 1985 .

[2]  T. Hansen,et al.  Silicon UV-Photodiodes Using Natural Inversion Layers , 1978 .

[3]  Raj Korde,et al.  Stable, high quantum efficiency, UV-enhanced silicon photodiodes by arsenic diffusion , 1987 .

[4]  Donald R. Young,et al.  Reduction of electron and hole trapping in SiO2 by rapid thermal annealing , 1984 .

[5]  J. Gardner,et al.  Response time and linearity of inversion layer silicon photodiodes. , 1985, Applied optics.

[6]  R. L. Booker,et al.  Photodiode quantum efficiency enhancement at 365 nm: optical and electrical. , 1982, Applied optics.

[7]  S. Pearton,et al.  Hydrogen injection and neutralization of boron acceptors in silicon boiled in water , 1986 .

[8]  R. E. Hart,et al.  Photon‐degradation effects in terrestrial silicon solar cells , 1979 .

[9]  Jon Geist,et al.  Silicon photodiode front region collection efficiency models , 1980 .

[10]  W. Budde.  Physical detectors of optical radiation , 1983 .

[11]  J. Geist,et al.  New calculations of the quantum yield of silicon in the near ultraviolet , 1983 .

[12]  A. Russell Schaefer,et al.  Complete collection of minority carriers from the inversion layer in induced junction diodes , 1981 .

[13]  Jon Geist,et al.  The quantum yield of silicon in the visible , 1979 .

[14]  Dependence of radiation‐induced interface traps on gate electrode material in metal/SiO2/Si devices , 1985 .

[15]  A. R. Schaefer,et al.  Spectral response self-calibration and interpolation of silicon photodiodes. , 1980, Applied optics.

[16]  E. Zalewski,et al.  Silicon photodiode device with 100% external quantum efficiency. , 1983, Applied optics.

[17]  J. Verdebout.  Semiquantitative model for the oxide bias experiment and its application to the study of p+ nn+ photodiode degradation. , 1984, Applied optics.

[18]  N. Fox,et al.  Oxide-bias Measurements in the Silicon Photodiode Self-calibration Technique , 1985 .

[19]  J. Geist,et al.  Silicon photodiode absolute spectral response self-calibration. , 1980, Applied optics.

[20]  L. Boivin,et al.  Electrically calibrated absolute radiometer suitable for measurement automation. , 1986, Applied optics.

[21]  M. A. Lind,et al.  Silicon photodetector instabilities in the uv. , 1976, Applied optics.