Ruggedness analysis of 3.3 kV high voltage diodes considering various buffer structures and edge terminations

Buffer structures and edge termination have a decisive influence on the static and dynamic characteristics of free-wheeling diodes. In this paper the influence of buffer structures at the cathode side, the influence of the design of the edge termination and of a resistive zone at the anode side are analysed with respect to the ruggedness of free-wheeling diodes. Therefore, we investigated the device behaviour by means of numerical device simulation concerning the formation of current filamentation and the correlated shape of the electrical field distribution. The considered edge termination of the diodes was planar junction termination extensions and a beveled edge. Various buffer structures, a Gaussian buffer and a buried n-doped layer of increased doping called epitaxy level buffer are compared with a reference diode without any buffer structure.

[1]  Yoshifumi Tomomatsu,et al.  An analysis and improvement of destruction immunity during reverse recovery for high voltage planar diodes under high dIrr/dt condition , 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.

[2]  Josef Lutz,et al.  Effects of different buffer structures on the avalanche behaviour of high voltage diodes under high reverse current conditions , 2006 .

[3]  J. Lutz,et al.  Influence of buffer structures on static and dynamic ruggedness of high voltage FWDs , 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

[4]  Munaf Rahimo,et al.  2.5kV-6.5kV Industry Standard IGBT Modules Setting a New Benchmark in SOA Capability , 2004 .

[5]  Elmar Falck,et al.  Influence of joule heating on current filaments induced by avalanche injection , 2006 .

[6]  F.-J. Niedernostheide,et al.  Experimental and numerical investigations of 13-kV diodes and asymmetric light-triggered thyristors , 2005, 2005 European Conference on Power Electronics and Applications.

[7]  Josef Lutz,et al.  Dynamic avalanche and reliability of high voltage diodes , 2003, Microelectron. Reliab..

[8]  H. Egawa,et al.  Avalanche characteristics and failure mechanism of high voltage diodes , 1966 .

[9]  Y. Minami,et al.  4.5 kV high-speed and rugged planar diode with novel carrier distribution control , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[11]  U. Schlapbach,et al.  Switching-self-clamping-mode "SSCM", a breakthrough in SOA performance for high voltage IGBTs and diodes , 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

[12]  Abb Switzerland.  Switching-Self-Clamping-Mode"SSCM"for Over-voltage Protection in High Voltage IGBT Applications , 2006 .

[13]  R. V. Overstraeten,et al.  Measurement of the ionization rates in diffused silicon p-n junctions , 1970 .