60-GHz SOI CMOS traveling-wave amplifier with NF below 3.8 dB from 0.1 to 40 GHz

In this paper, the design and the results of a CMOS traveling-wave amplifier (TWA) optimized for minimum noise figure is presented. Design tradeoffs and optimization guidelines for maximum operation frequency, gain and minimum noise are discussed by means of analytical calculations and simulations. The MMIC is fabricated using digital 90-nm silicon on insulator (SOI) technology and requires a chip area of only 0.3 mm/sup 2/. At a supply voltage of 2 V and a supply current of 66 mA, a gain of 9.7 dB/spl plusmn/1.6 dB is measured over a frequency range from 10 to 59 GHz. Toward dc, the gain increases up to 16 dB. The unity gain cutoff frequency is 71 GHz. At 20 and 40 GHz, the circuit has a 1-dB output compression point of 12.5 and 9.5 dBm, respectively. From 0.1 to 40 GHz, a noise figure below 3.8 dB is measured. The results are achieved at source/load impedances of 50 /spl Omega/ and include the pad parasitics. To the author's knowledge, the TWA has by far the lowest noise figure achieved for a silicon-based amplifier with comparable bandwidth.

[1]  F. Ellinger,et al.  30-40-GHz drain-pumped passive-mixer MMIC fabricated on VLSI SOI CMOS technology , 2004, IEEE Transactions on Microwave Theory and Techniques.

[2]  Liang-Hung Lu,et al.  A 4-91 GHz distributed amplifier in a standard 0.12 /spl mu/m SOI CMOS microprocessor technology , 2003, Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003..

[3]  L. D. Reynolds,et al.  A Monolithic GaAs 1-13-GHz Traveling-Wave Amplifier , 1982 .

[4]  F. Ellinger.  26-42 GHz SOI CMOS low noise amplifier , 2004, IEEE Journal of Solid-State Circuits.

[5]  Hitoshi Hayashi,et al.  A low-noise distributed amplifier using cascode-connected BJT terminal circuit , 2001, APMC 2001. 2001 Asia-Pacific Microwave Conference (Cat. No.01TH8577).

[6]  Y. Baeyens,et al.  SiGe broadband amplifiers with up to 80 GHz bandwidth for optical applications at 43 Gbit/s and beyond , 2003, 33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C).

[7]  Ali Hajimiri,et al.  Distributed integrated circuits: an alternative approach to high-frequency design , 2002, IEEE Commun. Mag..

[8]  R.E. Leoni,et al.  A DC-45 GHz metamorphic HEMT traveling wave amplifier , 2001, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191).

[9]  Walter H. Ku,et al.  An integrated CMOS distributed amplifier utilizing packaging inductance , 1997 .

[10]  Ali Hajimiri,et al.  Concepts and methods in optimization of integrated LC VCOs , 2001, IEEE J. Solid State Circuits.

[11]  D. Mensa,et al.  80 GHz distributed amplifiers with transferred-substrate heterojunction bipolar transistors , 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).

[12]  Y.M.M. Antar,et al.  Performance of 1-10-GHz traveling wave amplifiers in 0.18-μm CMOS , 2002, IEEE Microwave and Wireless Components Letters.

[13]  F. Ellinger,et al.  Ultracompact SOI CMOS frequency doubler for low power applications at 26.5-28.5 GHz , 2004, IEEE Microwave and Wireless Components Letters.

[14]  D. J. Allstot,et al.  A fully integrated 0.5-5.5 GHz CMOS distributed amplifier , 2000 .

[15]  Frank Ellinger.  Noise investigations of 90 nm VLSI CMOS technologies for analog integrated circuits at millimeter wave frequencies , 2004 .

[16]  Kuo-Liang Deng,et al.  A 0.6-22-GHz broadband CMOS distributed amplifier , 2003, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.

[17]  A.A. Abidi,et al.  High-frequency noise measurements on FET's with small dimensions , 1986, IEEE Transactions on Electron Devices.

[18]  Jonghae Kim,et al.  A 243-GHz F/sub t/ and 208-GHz F/sub max/, 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capability , 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

[19]  M. Rodwell,et al.  112-GHz, 157-GHz, and 180-GHz InP HEMT traveling-wave amplifiers , 1998 .

[20]  F. Ellinger,et al.  60 GHz VCO with wideband tuning range fabricated on VLSI SOI CMOS technology , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

[21]  C. S. Aitchison,et al.  The Intrinsic Noise Figure of the MESFET Distributed Amplifier , 1985 .

[22]  F. Ellinger,et al.  High-Q inductors on digital VLSI CMOS substrate for analog RF applications , 2003, Proceedings of the 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003. (Cat. No.03TH8678).