Research on Effects of ESD and Square-wave EMP on Microelectronic Device

In order to get the most sensitive ports and parameters and related regularity of microwave low-noise transistor to electromagnetic pulse and the damage/failure mode and mechanism of microelectronic devices,firstly,the Human Body Model(HBM) is adopted in the related experiments of ESD sensibility of two kinds of silicon triode(3DG218,3358).It finds that the sensitive port to ESD is CB junction and the sensitive parameter is V_(BRCEO) when the device damaged;and then the square-wave injection is adopted in the research.Two different batches of 3358 transistor,which produced by a famous foreign company,are adopted in the experiment.The voltages of inversing injection into CB and EB junction are compared in order to find which is more sensitive,and finds that the CB junction is the most sensitive port to EMP.The conclusion is different with what has been confirmed in previous research.