Orientation dependence of HgCdTe epitaxial layers grown by MOCVD on Si substrates
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Hideo Wada | M. Nagashima | M. Nagashima | M. Uchikoshi | M. Uchikoshi | Lisa Sugiura | Keitaro Shigenaka | K. Matsushita | Fumio Nakata | K. Hirahara | H. Wada | K. Hirahara | K. Matsushita | K. Shigenaka | L. Sugiura | F. Nakata
[1] J. W. Matthews,et al. Effect of coherency strain and misfit dislocations on the mode of growth of thin films , 1975 .
[2] H. Lewerenz,et al. In situ preparation of hydrogen-terminated silicon single-crystal surfaces , 1992 .
[3] D. B. Fenner,et al. Silicon surface passivation by hydrogen termination: A comparative study of preparation methods , 1989 .
[4] S. Sivananthan,et al. Current status of direct growth of CdTe and HgCdTe on silicon by molecular‐beam epitaxy , 1992 .
[5] Michael Schenk,et al. New defect etchants for CdTe and Hg1-xCdxTe , 1990 .
[6] L. Sugiura,et al. Effects of growth rate and mercury partial pressure on twin formation in HgCdTe (111) layers grown by metalorganic chemical vapor deposition , 1993 .
[7] J. W. Matthews,et al. Defects in epitaxial multilayers: I. Misfit dislocations* , 1974 .
[8] G. S. Higashi,et al. Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology , 1989 .
[9] R. Solanki,et al. Ultraviolet photon‐assisted heteroepitaxy of CdTe and Hg1−xCdxTe on GaAs/Si substrates , 1989 .
[10] R. Sporken,et al. Molecular‐beam epitaxy of CdTe on large area Si(100) , 1991 .
[11] G. B. Stringfellow. Organometallic Vapor-Phase Epitaxy: Theory and Practice , 1989 .
[12] N. Ōtsuka,et al. Origin of dual epitaxy in the growth of CdTe on (211) GaAs , 1992 .
[13] Kenneth R. Zanio. HgCdTe on Si for hybrid and monolithic FPAs , 1990, Defense, Security, and Sensing.
[14] J. Bajaj,et al. Material characteristics of metalorganic chemical vapor deposition Hg1-xCdxTe/GaAs/Si , 1990 .
[15] L. Sugiura,et al. Lattice relaxation in large mismatch systems of (111)CdTe/(100)GaAs and (133)CdTe/(211)GaAs layers , 1994 .