Orientation dependence of HgCdTe epitaxial layers grown by MOCVD on Si substrates

Orientation dependence of HgCdTe epilayers grown by MOCVD on Si substrates was studied. Substrate orientation is considered to be one of the most sensitive factors to enable hetero-epitaxial growth on silicon substrates, especially in the case of a low temperature growth process. The present work was carried out with characterized features of a low temperature process for HgCdTe growth on Si and using a thin CdTe buffer layer. The (100), (100) misoriented toward [110], (311), (211), (111), and (331) oriented Si substrates were used in the present work. The best results were obtained on (211)Si substrates with an x-ray full width at half maximum of 153 arc sec for a 5 (im thickness HgCdTe layer and 69 arc sec for a 10 um thickness layer. It was found that the effective lattice mismatch of CdTe/Si heterosystem was reduced to 0.6% (for the 611 lattice spacing of CdTe and 333 spacing of Si) in the case of (133)CdTe/(211)Si.

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