Exact determination of superlattice structure by small-angle x-ray diffraction
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[1] M. Kondô,et al. Exact determination of superlattice structures by small‐angle x‐ray diffraction method , 1988 .
[2] S. Chu,et al. High-resolution x-ray diffraction and transmission electron microscopy studies of InGaAs/InP superlattices grown by gas-source molecular beam epitaxy , 1986 .
[3] M. Panish,et al. Structural characterization of GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy , 1986 .
[4] H. Kato,et al. X-Ray Studies of Semiconductor Superlattices Grown by Molecular Beam Epitaxy , 1985 .
[5] K. Ploog,et al. Optical and structural properties of molecular-beam epitaxially grown Ga0.47In0.53As/Al0.48In0.52As superlattices, emitting at 1.55 μm at room temperature , 1985 .
[6] L. Esaki,et al. X-ray diffraction study of a one-dimensional GaAs–AlAs superlattice , 1977 .
[7] A. Segmüller,et al. X-ray diffraction from one-dimensional superlattices in GaAs1−xPx crystals; erratum , 1973 .
[8] L. G. Parratt. Surface Studies of Solids by Total Reflection of X-Rays , 1954 .
[9] R. Fleming,et al. X‐ray diffraction study of interdiffusion and growth in (GaAs)n(AlAs)m multilayers , 1980 .
[10] L. Esaki,et al. Smooth and coherent layers of GaAs and AlAs grown by molecular beam epitaxy , 1976 .
[11] Reginald W. James,et al. The Optical principles of the diffraction of X-rays , 1948 .